CBI S8550 0.8A PNP transistor offering 0.8A collector current and housed in SOT23 package for general

Key Attributes
Model Number: S8550(0.8A)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550(0.8A)
Package:
SOT-23
Product Description

Product Overview

This PNP transistor, complimentary to the S8050, is designed for general-purpose applications. It offers a continuous collector current of 0.8A and a collector power dissipation of 0.3W. The transistor is housed in a SOT-23 package, making it suitable for surface mounting.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Max Units
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -0.8 A
Collector Power Dissipation PC (TA=25) 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
Collector-base breakdown voltage V(BR)CBO IC = -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 A
DC current gain hFE(1) VCE= -1V, IC= -50mA 200 350
DC current gain hFE(2) VCE= -1V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
Transition frequency fT VCE= -6V, IC= -20mA f=30MHz 150 MHz

Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR

Package Outline: Plastic surface mounted package; 3 leads SOT-23


2410121456_CBI-S8550-0-8A_C5362082.pdf

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