CBI S8550 0.8A PNP transistor offering 0.8A collector current and housed in SOT23 package for general
Product Overview
This PNP transistor, complimentary to the S8050, is designed for general-purpose applications. It offers a continuous collector current of 0.8A and a collector power dissipation of 0.3W. The transistor is housed in a SOT-23 package, making it suitable for surface mounting.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V | ||
| Collector-Emitter Voltage | VCEO | -25 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Collector Current - Continuous | IC | -0.8 | A | ||
| Collector Power Dissipation | PC | (TA=25) | 0.3 | W | |
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC = -100A, IE=0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1mA, IB=0 | -25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -0.1 | A | |
| Collector cut-off current | ICEO | VCE= -20V, IB=0 | -0.1 | A | |
| Emitter cut-off current | IEBO | VEB= -3V, IC=0 | -0.1 | A | |
| DC current gain | hFE(1) | VCE= -1V, IC= -50mA | 200 | 350 | |
| DC current gain | hFE(2) | VCE= -1V, IC= -500mA | 50 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB= -50mA | -0.6 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB= -50mA | -1.2 | V | |
| Transition frequency | fT | VCE= -6V, IC= -20mA f=30MHz | 150 | MHz |
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
Package Outline: Plastic surface mounted package; 3 leads SOT-23
2410121456_CBI-S8550-0-8A_C5362082.pdf
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