Surface Mount Dual Bias Resistor Transistor CBI MMUN5216DW with Integrated Resistor Network in SOT363
Key Attributes
Model Number:
MMUN5216DW
Product Custom Attributes
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN5216DW
Package:
SOT-363
Product Description
Product Overview
The MMUN5211DW Series Dual Bias Resistor Transistors are NPN silicon surface mount transistors featuring a monolithic bias resistor network. These devices integrate a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their external bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount applications where space is limited. The series offers various resistor configurations and is manufactured in the compact SOT-363 package. The material of the product complies with RoHS requirements.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Origin: China
- Material Compliance: RoHS
- Package Type: SOT-363
Technical Specifications
| Model | Marking | R1 (K) | R2 (K) | Shipping | DC Current Gain (hFE) Min. | Collector Base Cutoff Current (ICBO) Max. | Collector Emitter Cutoff Current (ICEO) Max. | Emitter Base Cutoff Current (IEBO) Max. | Collector Base Breakdown Voltage (V(BR)CBO) Min. | Collector Emitter Breakdown Voltage (V(BR)CEO) Min. | Collector Emitter Saturation Voltage (VCEsat) Max. | Output Voltage (on) (VOL) Max. | Output Voltage (off) (VOH) Min. | Input Resistor (R1) Typical | Resistor Ratio (R1/R2) Typical |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMUN5211DW | 7A | 10 | 10 | 3000/Tape&Reel | 35 | 100 nA | 500 nA | 0.5 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 7 K | 0.8 |
| MMUN5212DW | 7B | 22 | 22 | 3000/Tape&Reel | 60 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 15.4 K | 0.8 |
| MMUN5213DW | 7C | 47 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 32.9 K | 0.8 |
| MMUN5214DW | 7D | 10 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 7 K | 0.17 |
| MMUN5215DW | 7E | 10 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 0.9 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 7 K | - | |
| MMUN5216DW | 7F | 4.7 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 1.9 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 3.3 K | - | |
| MMUN5230DW | 7G | 1 | 1 | 3000/Tape&Reel | 3 | 100 nA | 500 nA | 4.3 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 0.7 K | 0.8 |
| MMUN5231DW | 7H | 2.2 | 2.2 | 3000/Tape&Reel | 8 | 100 nA | 500 nA | 2.3 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 1.5 K | 0.8 |
| MMUN5232DW | 7J | 4.7 | 4.7 | 3000/Tape&Reel | 15 | 100 nA | 500 nA | 1.5 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 3.3 K | 0.8 |
| MMUN5233DW | 7K | 4.7 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.18 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 3.3 K | 0.055 |
| MMUN5234DW | 7L | 22 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.13 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 15.4 K | 0.38 |
| MMUN5235DW | 7M | 2.2 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 1.54 K | 0.038 |
| MMUN5238DW | 7Q | 2.2 | - | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 4 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 1.54 K | - |
| MMUN5241DW | 7T | 100 | - | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 70 K | - |
| Maximum Ratings (TA = 25C) | |||||||||||||||
| Collector-Base Voltage (VCBO) | 50 Vdc | ||||||||||||||
| Collector-Emitter Voltage (VCEO) | 50 Vdc | ||||||||||||||
| Collector Current (IC) | 100 mAdc | ||||||||||||||
| Total Device Dissipation (PD) (One Junction Heated) | 187 mW (Note 1) | ||||||||||||||
| Total Device Dissipation (PD) (Both Junctions Heated) | 250 mW (Note 1) | 385 mW (Note 2) | |||||||||||||
| Junction-to-Ambient Thermal Resistance (RJA) (One Junction Heated) | 670 C/W (Note 1) | 490 C/W (Note 2) | |||||||||||||
| Junction-to-Ambient Thermal Resistance (RJA) (Both Junctions Heated) | 493 C/W (Note 1) | 325 C/W (Note 2) | |||||||||||||
| Junction-to-Lead Thermal Resistance (RJL) | 188 C/W (Note 1) | 208 C/W (Note 2) | |||||||||||||
| Junction and Storage Temperature (TJ, Tstg) | 55 to +150 C |
Notes:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
2410121707_CBI-MMUN5216DW_C21714283.pdf
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