SOT23 Package PNP Silicon Transistor CBI MMBT2907A for Switching and AF Amplifier Electronic Circuit

Key Attributes
Model Number: MMBT2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description

Product Overview

The MMBT2907 / MMBT2907A is a PNP silicon epitaxial planar transistor designed for switching and AF amplifier applications. This transistor is categorized into groups based on its DC current gain. It is housed in a SOT-23 plastic package.

Product Attributes

  • Package Type: SOT-23 Plastic
  • Transistor Type: PNP Silicon Epitaxial Planar
  • Application: Switching and AF amplifier

Technical Specifications

Parameter Symbol MMBT2907 MMBT2907A Unit
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage -VCBO 60 60 V
Collector Emitter Voltage -VCEO 40 60 V
Emitter Base Voltage -VEBO 5 5 V
Collector Current -IC 600 600 mA
Power Dissipation Ptot 350 350 mW
Junction Temperature Tj 150 150 °C
Storage Temperature Range Tstg -55 to +150 -55 to +150 °C
Characteristics (Ta = 25 °C)
DC Current Gain hFE 35-300 50-300 -
Collector Base Cutoff Current -ICBO - 20 nA
Collector Base Breakdown Voltage -V(BR)CBO 60 60 V
Collector Emitter Breakdown Voltage -V(BR)CEO 40 60 V
Emitter Base Breakdown Voltage -V(BR)EBO 5 5 V
Collector Saturation Voltage -VCE(sat) 0.4 1.6 V
Base Saturation Voltage -VBE(sat) 1.3 2.6 V
Gain Bandwidth Product fT 200 200 MHz
Collector Output Capacitance Cob 8 8 pF
Turn-on Time ton 45 45 ns
Delay Time td 10 10 ns
Rise Time tr 40 40 ns
Turn-off Time toff 100 100 ns
Storage Time ts 80 80 ns
Fall Time tf 30 30 ns

2410121238_CBI-MMBT2907A_C2828458.pdf

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