Plastic Encapsulated Diode CBI MMBD4148W Fast Switching Speed for Industrial Electronic Applications

Key Attributes
Model Number: MMBD4148W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
MMBD4148W
Package:
SOT-323
Product Description

Product Overview

This plastic-encapsulated diode is designed for general-purpose switching applications, offering fast switching speed and high conductance. It is suitable for various industrial and electronic uses where reliable switching performance is required.

Product Attributes

  • Marking: A2
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Limit Unit Conditions
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Peak Reverse Voltage VRRM 75 V
Working Peak Reverse Voltage VRWM 75 V
DC Blocking Voltage VR 75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 150 mA
Forward Surge Current @t=8.3ms IFSM 2.0 A
Power Dissipation Pd 200 mW
Thermal Resistance Junction to Ambient RJA 625 /W
Non-Repetitive Peak Junction Temperature Tj 150
Storage Temperature TSTG -55~+150
Reverse breakdown voltage V (BR) 75 V IR=10A
Forward voltage VF1 0.715 V IF=1mA
Forward voltage VF2 0.855 V IF=10mA
Forward voltage VF3 1.0 V IF=50mA
Forward voltage VF4 1.25 V IF=150mA
Reverse current IR1 1 A VR=75V
Reverse current IR2 25 nA VR=20V
Capacitance between terminals CT 2 pF VR=0V,f=1MHz
Reverse recovery time trr 4 ns IF=IR=10mA Irr=0.1XIR,RL=100

2410121434_CBI-MMBD4148W_C2919785.pdf

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