Silicon Epitaxial Planar Fast Switching Diode CBI 1N4448W SOD123 Package Suitable for Surface Mount
Key Attributes
Model Number:
1N4448W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
100nA@80V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
80V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
400mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
1N4448W
Package:
SOD-123
Product Description
Product Overview
This is a Silicon Epitaxial Planar Switching Diode, specifically a Fast Switching Diode. It is designed for surface-mounted applications within the SOD-123 package. Key characteristics include its forward voltage and reverse leakage current, with specific values provided at various current and voltage conditions. The diode also features a defined reverse breakdown voltage and total capacitance. Its fast switching capability is highlighted by its reverse recovery time.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: Silicon Epitaxial Planar Switching Diode
- Category: Fast Switching Diode
- Package: SOD-123
- Marking Code: W1
Technical Specifications
| Parameter | Symbol | Min. | Max. | Unit | Conditions |
|---|---|---|---|---|---|
| Forward Voltage | V | 0.62 | - | V | IF = 5 mA |
| Forward Voltage | V | - | 0.72 | V | IF = 10 mA |
| Forward Voltage | V | - | 0.855 | V | IF = 100 mA |
| Forward Voltage | V | - | 1.25 | V | IF = 150 mA |
| Reverse Leakage Current | IR | - | - | nA | VR = 80 V |
| Reverse Leakage Current | IR | - | - | nA | VR = 20 V |
| Reverse Leakage Current | IR | - | - | A | VR = 75 V, TJ = 150 C |
| Reverse Leakage Current | IR | - | - | A | VR = 25 V, TJ = 150 C |
| Reverse Breakdown Voltage | V(BR)R | 80 | - | V | IR = 100 A |
| Total Capacitance | Ctot | - | 4 | pF | VR = 0.5 V, f = 1 MHz |
| Reverse Recovery Time | trr | - | 4 | ns | IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 |
| Peak Reverse Voltage | VRM | - | 100 | V | (Ta = 25 C) |
| Reverse Voltage | VR | - | 80 | V | (Ta = 25 C) |
| Average Rectified Forward Current | IF(AV) | - | 150 | mA | (Ta = 25 C) |
| Forward Continuous Current | IFM | - | 300 | mA | (Ta = 25 C) |
| Non-Repetitive Peak Forward Surge Current | IFSM | - | 4 | A | (t = 1 s, Ta = 25 C) |
| Power Dissipation | Pd | - | 400 | mW | (Ta = 25 C) |
| Junction Temperature | Tj | - | 150 | C | |
| Storage Temperature Range | Tstg | -65 | +150 | C |
2410121502_CBI-1N4448W_C2919735.pdf
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