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quality PNP transistor CBI MMBT3906 featuring epitaxial planar die construction and SOT23 three lead package factory
quality PNP transistor CBI MMBT3906 featuring epitaxial planar die construction and SOT23 three lead package factory

PNP transistor CBI MMBT3906 featuring epitaxial planar die construction and SOT23 three lead package

Key Attributes
Model Number: MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description

Product Overview

The MMBT3906 is a PNP Epitaxial Planar Die Construction transistor. It is the complementary type to the NPN transistor MMBT3904. Designed for general-purpose applications, this transistor is supplied in a SOT-23 plastic surface-mounted package with 3 leads.

Product Attributes

  • Type: PNP Transistor
  • Construction: Epitaxial Planar Die
  • Package: SOT-23 (Plastic surface mounted package; 3 leads)
  • Complementary Type: MMBT3904 (NPN)

Technical Specifications

Symbol Parameter Test Conditions Min Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -200 mA
PC Total Device Dissipation 200 mW
RJA Thermal Resistance Junction to Ambient 625 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC=-10A, IE=0 -40 V
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA, IB=0 -40 V
V(BR)EBO Emitter-base breakdown voltage IE=-10A, IC=0 -5 V
ICBO Collector cut-off current VCB=-40V, IE=0 -0.1 A
ICEX Collector cut-off current VCE=-30V, VBE(off)=-3V -50 nA
IEBO Emitter cut-off current VEB=-5V, IC=0 -0.1 A
hFE DC current gain VCE=-1V, IC=-10mA 100 300
VCE=-1V, IC=-50mA 60
VCE=-1V, IC=-100mA 30
VCE(sat) Collector-emitter saturation voltage IC=-50mA, IB=-5mA -0.3 V
VBE(sat) Base-emitter saturation voltage IC=-50mA, IB=-5mA -0.95 V
fT Transition frequency VCE=-20V, IC=-10mA, f=100MHz 300 MHz
td Delay Time VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-IB2=-1mA 35 nS
tr Rise Time VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-IB2=-1mA 35 nS
ts Storage Time VCC=-3V, IC=-10mA, IB1=-IB2=-1mA 225 nS
tf Fall Time VCC=-3V, IC=-10mA, IB1=-IB2=-1mA 75 nS

Pinout

  • 1. BASE
  • 2. EMITTER
  • 3. COLLECTOR

2410121228_CBI-MMBT3906_C2828446.pdf

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