Switching diode CBI DAP222T with 4 nanosecond recovery time and 0.1 microamp reverse leakage current

Key Attributes
Model Number: DAP222T
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
DAP222T
Package:
SOT-523
Product Description

Product Overview

The DAP222T is a switching diode designed for high-speed applications and suitable for high packing density layouts. It offers high reliability and is ideal for various electronic circuits requiring efficient switching. Its characteristics include a reverse breakdown voltage of 80V and a low forward voltage drop.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Model: DAP222T
  • Type: Plastic-Encapsulate Transistors, SWITCHING DIODE
  • Package: SOT-523

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Reverse breakdown voltage V(BR) IR= 100A 80 V
Reverse voltage leakage current IR VR=70V 0.1 A
Forward voltage VF IF=100mA 1.2 V
Diode capacitance CD VR=0, f=1MHz 3.5 pF
Reverse recovery time trr VR=6V, IF=IR=5mA 4 ns

Maximum Ratings

Parameter Symbol Limit Unit
Non-Repetitive Peak Reverse Voltage VRM 80 V
DC Blocking Voltage VR 80 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 100 mA
Power Dissipation PD 150 mW
Operation Junction and Storage Temperature Range TJ,TSTG -55~+150
Forward Surge Current @t=8.3ms Non-Repetitive Peak IFSM 2.0 A

Thermal Characteristics

Parameter Symbol Limit Unit
Thermal resistance From Junction to ambient RJA 833 /W

2509181520_CBI-DAP222T_C51822258.pdf

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