Switching diode CBI DAP222T with 4 nanosecond recovery time and 0.1 microamp reverse leakage current
Product Overview
The DAP222T is a switching diode designed for high-speed applications and suitable for high packing density layouts. It offers high reliability and is ideal for various electronic circuits requiring efficient switching. Its characteristics include a reverse breakdown voltage of 80V and a low forward voltage drop.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Model: DAP222T
- Type: Plastic-Encapsulate Transistors, SWITCHING DIODE
- Package: SOT-523
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Reverse breakdown voltage | V(BR) | IR= 100A | 80 | V | |
| Reverse voltage leakage current | IR | VR=70V | 0.1 | A | |
| Forward voltage | VF | IF=100mA | 1.2 | V | |
| Diode capacitance | CD | VR=0, f=1MHz | 3.5 | pF | |
| Reverse recovery time | trr | VR=6V, IF=IR=5mA | 4 | ns |
Maximum Ratings
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage | VRM | 80 | V |
| DC Blocking Voltage | VR | 80 | V |
| Forward Continuous Current | IFM | 300 | mA |
| Average Rectified Output Current | IO | 100 | mA |
| Power Dissipation | PD | 150 | mW |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | |
| Forward Surge Current @t=8.3ms Non-Repetitive Peak | IFSM | 2.0 | A |
Thermal Characteristics
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Thermal resistance From Junction to ambient | RJA | 833 | /W |
2509181520_CBI-DAP222T_C51822258.pdf
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