High speed switching diode CBI BAV70W silicon epitaxial planar type with ultra small surface mount package design
Key Attributes
Model Number:
BAV70W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
2.5uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
1 Pair Common Cathode
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
175mA
Mfr. Part #:
BAV70W
Package:
SOT-323
Product Description
Product Overview
The BAV70W is a silicon epitaxial planar switching diode designed for high-speed applications. It features an ultra-small surface mount package, making it ideal for compact electronic designs. This diode offers fast switching characteristics.
Product Attributes
- Marking Code: A4
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | ||
| Reverse Voltage | VR | 75 | V | ||
| Continuous Forward Current (Single diode loaded) | IF | 175 | mA | ||
| Continuous Forward Current (Double diode loaded) | IF | 100 | mA | ||
| Repetitive Peak Forward Current | IFRM | 500 | mA | ||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A | ||
| Non-repetitive Peak Forward Surge Current (at t = 1 ms) | IFSM | 1 | A | ||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 4 | A | ||
| Power Dissipation | Ptot | 200 | mW | ||
| Junction Temperature | Tj | 150 | C | ||
| Storage Temperature Range | Tstg | -65 to +150 | C | ||
| Characteristics (at Ta = 25 C) | |||||
| Reverse Breakdown Voltage (at IR = 100 A) | VBR(R) | 75 | V | 75 | |
| Forward Voltage (at IF = 1 mA) | VF | V | 0.715 | ||
| Forward Voltage (at IF = 10 mA) | VF | V | 0.855 | ||
| Forward Voltage (at IF = 50 mA) | VF | V | 1 | ||
| Forward Voltage (at IF = 150 mA) | VF | V | 1.25 | ||
| Reverse Leakage Current (at VR = 25 V) | IR | nA | 30 | ||
| Reverse Leakage Current (at VR = 75 V) | IR | nA | 100 | ||
| Reverse Leakage Current (at VR = 25 V, TJ = 150 C) | IR | A | 2.5 | ||
| Reverse Leakage Current (at VR = 75 V, TJ = 150 C) | IR | A | 60 | ||
| Diode Capacitance (at VR = 0 V, f = 1 MHz) | Ctot | pF | 2 | ||
| Reverse Recovery Time (at IF = 10 mA to IR = 10 mA, Irr = 0.1 IR, RL = 100 ) | trr | ns | 4 | ||
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 0.900 - 1.100 | 0.035 - 0.043 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.000 | 0.035 - 0.039 |
| b | 0.200 - 0.400 | 0.008 - 0.016 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.000 - 2.200 | 0.079 - 0.087 |
| E | 1.150 - 1.350 | 0.045 - 0.053 |
| E1 | 2.150 - 2.450 | 0.085 - 0.096 |
| e | 1.200 - 1.400 TYP. | 0.047 - 0.055 TYP. |
| e1 | 0.650 TYP. | 0.026 TYP. |
| L | ||
| L1 | 0.260 - 0.460 | 0.010 - 0.018 |
| 0 - 8 | 0 - 8 | |
| 0.525 REF. | 0.021 REF. |
2410121313_CBI-BAV70W_C2836069.pdf
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