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quality Planar Die Zener Diode CBI BZT52B24 with Plastic Surface Mounted Package and 350mW Power Dissipation factory
quality Planar Die Zener Diode CBI BZT52B24 with Plastic Surface Mounted Package and 350mW Power Dissipation factory

Planar Die Zener Diode CBI BZT52B24 with Plastic Surface Mounted Package and 350mW Power Dissipation

Key Attributes
Model Number: BZT52B24
Product Custom Attributes
Impedance(Zzt):
70Ω
Pd - Power Dissipation:
350mW
Zener Voltage(Range):
23.52V~24.48V
Zener Voltage(Nom):
24V
Impedance(Zzk):
250Ω
Mfr. Part #:
BZT52B24
Package:
SOD-123
Product Description

Product Overview

This Zener Diode series features a planar die construction and a 350mW power dissipation capability on a ceramic PCB. Designed for general purpose, medium current applications, these diodes are ideally suited for automated assembly processes. Lead-free versions are available.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Packaging: Plastic Surface Mounted Package (SOD-123)
  • Availability: Lead Free Version Available

Technical Specifications

Type Number Type Code Nominal Zener Voltage (Vz) @ Izt (V) Test Current (Izt) (mA) Maximum Zener Impedance (Zzt) @ Izt () Maximum Reverse Current (Ir) @ Vr (A) Typical Temperature Coefficient (mV/C) Forward Voltage (Vf) @ If = 10mA (V) Power Dissipation (Pd) (mW)
BZT52B2V4 2WX 2.4 5 100 50 -3.5 0.9 350
BZT52B2V7 2W1 2.7 5 100 20 -3.5 0.9 350
BZT52B3V0 2W2 3.0 5 95 10 -3.5 0.9 350
BZT52B3V3 2W3 3.3 5 95 5 -3.5 0.9 350
BZT52B3V6 2W4 3.6 5 90 5 -3.5 0.9 350
BZT52B3V9 2W5 3.9 5 90 3 -3.5 0.9 350
BZT52B4V3 2W6 4.3 5 90 3 -3.5 0.9 350
BZT52B4V7 2W7 4.7 5 80 3 -3.5 0.9 350
BZT52B5V1 2W8 5.1 5 60 2 -2.7 0.9 350
BZT52B5V6 2W9 5.6 5 40 1 -2.0 0.9 350
BZT52B6V2 2WA 6.2 5 10 3 0.4 0.9 350
BZT52B6V8 2WB 6.8 5 15 2 1.2 0.9 350
BZT52B7V5 2WC 7.5 5 15 1 2.5 0.9 350
BZT52B8V2 2WD 8.2 5 15 0.7 3.2 0.9 350
BZT52B9V1 2WE 9.1 5 15 0.5 3.8 0.9 350
BZT52B10 2WF 10 5 20 0.2 4.5 0.9 350
BZT52B11 2WG 11 5 20 0.1 5.4 0.9 350
BZT52B12 2WH 12 5 25 0.1 6.0 0.9 350
BZT52B13 2WI 13 5 30 0.1 7.0 0.9 350
BZT52B15 2WJ 15 5 30 0.1 9.2 0.9 350
BZT52B16 2WK 16 5 40 0.1 10.4 0.9 350
BZT52B18 2WL 18 5 45 0.1 12.4 0.9 350
BZT52B20 2WM 20 5 55 0.1 14.4 0.9 350
BZT52B22 2WN 22 5 55 0.1 16.4 0.9 350
BZT52B24 2WO 24 5 70 0.1 18.4 0.9 350
BZT52B27 2WP 27 2 80 0.1 21.4 0.9 350
BZT52B30 2WQ 30 2 80 0.1 24.4 0.9 350
BZT52B33 2WR 33 2 80 0.1 27.4 0.9 350
BZT52B36 2WS 36 2 90 0.1 30.4 0.9 350
BZT52B39 2WT 39 2 130 0.1 33.4 0.9 350
BZT52B43 2WU 43 2 130 0.1 36.4 0.9 350

Package Outline (SOD-123)

Symbol Dimension (mm) Min Dimension (mm) Max
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Maximum Ratings

(Ta=25C unless otherwise specified)

Characteristic Symbol Value Unit
Forward Voltage (Note 2) VF 0.9 V
Power Dissipation (Note 1) Pd 350 mW
Thermal Resistance from Junction to Ambient RJA 357 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150

Pin Description

  • 1: Cathode
  • 2: Anode

Notes

  1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  2. Short duration test pulse used to minimize self-heating effect.
  3. f = 1kHz.

2410121341_CBI-BZT52B24_C21714231.pdf

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