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quality Low Gate Charge P Channel MOSFET CBI BC3401 Featuring Advanced Trench Technology and Environmental Compliance factory
quality Low Gate Charge P Channel MOSFET CBI BC3401 Featuring Advanced Trench Technology and Environmental Compliance factory

Low Gate Charge P Channel MOSFET CBI BC3401 Featuring Advanced Trench Technology and Environmental Compliance

Key Attributes
Model Number: BC3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
50mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Input Capacitance(Ciss):
954pF
Output Capacitance(Coss):
115pF
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
BC3401
Package:
SOT-23
Product Description

Product Overview

The BC3401 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is well-suited for applications such as load switches or PWM applications. The BC3401 is a Pb-free product meeting ROHS & Sony 259 specifications, while the BC3401L is a Green Product ordering option. Both BC3401 and BC3401L are electrically identical. This product is designed and qualified for the consumer market. Applications or uses as critical components in life support devices or systems are not authorized.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Family: BC3401 / BC3401L
  • Package Type: SOT-23
  • Certifications: Pb-free (meets ROHS & Sony 259 specifications)
  • Environmental Compliance: Green Product (BC3401L)

Technical Specifications

Parameter Conditions Units Min Typ Max
Absolute Maximum Ratings
VDS V -30
VGS V 12
ID TA=25C A -4.2
IDM Pulsed Drain Current (Note B) A -30
PD Power Dissipation (Note A) TA=25C W 1.4
PD Power Dissipation (Note A) TA=70C W 1
TJ, TSTG Junction and Storage Temperature Range C -55 150
Electrical Characteristics (TJ=25C unless otherwise noted)
BVDSS ID=-250A, VGS=0V V -30
IDSS VDS=-24V, VGS=0V A -1
IGSS VDS=0V, VGS=12V nA 100
VGS(th) ID=-250A, VDS=VGS V -0.7 -1 -1.3
RDS(ON) VGS=-2.5V, ID=-1A m 120
RDS(ON) VGS=-4.5V, ID=-4A m 50 65
RDS(ON) VGS=-10V, ID=-4.2A m 42 50
gFS VDS=-5V, ID=-5A S 7 11
VSD IS=-1A, VGS=0V V -0.75 -1
ID(ON) VGS=-4.5V, ID=-4A A -4
IS A -2.2
Dynamic Parameters
Ciss VGS=0V, VDS=-15V, f=1MHz pF 954
Coss VGS=0V, VDS=-15V, f=1MHz pF 115
Crss VGS=0V, VDS=-15V, f=1MHz pF 77
Qg VGS=-10V, VDS=-15V, ID=-4A nC 9.4
Qgs VGS=-4.5V, VDS=-15V, ID=-4A nC 2
Qgd VGS=-4.5V, VDS=-15V, ID=-4A nC 3
tD(on) VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 ns 6.3
tr VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 ns 3.2
tD(off) VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 ns 38.2
tf VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 ns 12
Body Diode Characteristics
trr IF=-4A, dI/dt=100A/s ns 20.2
Qrr IF=-4A, dI/dt=100A/s nC 11.2
Maximum Body-Diode Continuous Current A -4
Thermal Characteristics
RJL Maximum Junction-to-Lead Steady-State C/W 43 60
RJA Maximum Junction-to-Ambient Steady-State (Note A) C/W 90

2410121849_CBI-BC3401_C5362100.pdf

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