Silicon Planar Zener Diodes CBI MM1ZB12 with Compact SOD123 Package and 500 Milliwatt Power Dissipation

Key Attributes
Model Number: MM1ZB12
Product Custom Attributes
Impedance(Zzt):
35Ω
Zener Voltage(Range):
11.76V~12.24V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
12V
Mfr. Part #:
MM1ZB12
Package:
SOD-123
Product Description

Product Overview

These SILICON PLANAR ZENER DIODES are designed for power dissipation of 500 mW with a Zener Voltage Tolerance of 2%. They are suitable for general-purpose applications requiring precise voltage regulation. The diodes are available in a compact SOD-123 package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Planar
  • Package: SOD-123

Technical Specifications

Type Marking Code Vznom (V) Vz Tolerance (%) IZT (mA) ZZT () IR (A) VF (V)
MM1Z2B4 2.4 5 2.3522.448 100 5 120 0.9
MM1Z2B7 2.7 5 2.6462.754 110 5 120 0.9
MM1Z3B0 3.0 5 2.943.06 120 5 50 0.9
MM1Z3B3 3.3 5 3.2343.366 130 5 20 0.9
MM1Z3B6 3.6 5 3.5283.672 130 5 10 0.9
MM1Z3B9 3.9 5 3.8223.978 130 5 5 0.9
MM1Z4B3 4.3 5 4.2144.386 130 5 5 0.9
MM1Z4B7 4.7 5 4.6064.794 130 5 2 0.9
MM1Z5B1 5.1 5 4.9985.202 130 5 2 1.5
MM1Z5B6 5.6 5 5.4885.712 80 5 1 2.5
MM1Z6B2 6.2 5 6.0766.324 50 5 1 3
MM1Z6B8 6.8 5 6.6646.936 30 5 0.5 3.5
MM1Z7B5 7.5 5 7.357.65 30 5 0.5 4
MM1Z8B2 8.2 5 8.0368.364 30 5 0.5 5
MM1Z9B1 9.1 5 8.9189.282 30 5 0.5 6
MM1ZB10 10 5 9.810.2 30 5 0.1 7
MM1ZB11 11 5 10.7811.22 30 5 0.1 8
MM1ZB12 12 5 11.7612.24 35 5 0.1 9
MM1ZB13 13 5 12.7413.26 35 5 0.1 10
MM1ZB15 15 5 14.715.3 40 5 0.1 11
MM1ZB16 16 5 15.6816.32 40 5 0.1 12
MM1ZB18 18 5 17.6418.36 45 5 0.1 13
MM1ZB20 20 5 19.620.4 50 5 0.1 15
MM1ZB22 22 5 21.5622.44 55 5 0.1 17
MM1ZB24 24 5 23.5224.48 60 5 0.1 19
MM1ZB27 27 5 26.4627.54 70 2 0.1 21
MM1ZB30 30 5 29.430.6 80 2 0.1 23
MM1ZB33 33 5 32.3433.66 80 2 0.1 25
MM1ZB36 36 5 35.2836.72 90 2 0.1 27
MM1ZB39 39 2.5 38.2239.78 100 2 2 30
MM1ZB43 43 2.5 42.1443.86 130 2 2 33
MM1ZB47 47 2.5 46.0647.94 150 2 2 36
MM1ZB51 51 2.5 49.9852.02 180 2 1 39
MM1ZB56 56 2.5 54.8857.12 180 2 1 43
MM1ZB62 62 2.5 60.7663.24 200 2 0.2 47
MM1ZB68 68 2.5 66.6469.36 250 2 0.2 52
MM1ZB75 75 2.5 73.576.5 300 2 0.2 57

Absolute Maximum Ratings (Ta = 25 C):

Parameter Symbol Value Unit
Power Dissipation Ptot 500 mW
Junction Temperature TJ 150 C
Storage Temperature Range TStg -55 to +150 C

Characteristics at Ta = 25 C:

Parameter Symbol Max. Unit
Thermal Resistance Junction to Ambient Air RthA 340 C/W

Note: VZ is tested with pulses (20 ms).


2509181520_CBI-MM1ZB12_C51822195.pdf

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