Power management P channel MOSFET CBI BSS84 ideal for portable electronics and small power circuitry
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a P-CHANNEL MOSFET in a SOT-23 plastic-encapsulated package. Designed for miniature surface mount applications, this device excels in reducing power loss and conserving energy, making it ideal for small power management circuitry. Its features include energy efficiency, low threshold voltage, and high-speed switching capabilities, all within a compact package that saves board space. Applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and cordless telephones.
Product Attributes
- Package Type: SOT-23
- Encapsulation: Plastic
- Channel Type: P-CHANNEL
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -50 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | -0.13 | A | |
| Pulsed Drain Current | IDM | -0.52 | A | @ tp < 10 s (note 1) |
| Power Dissipation | PD | 225 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 556 | /W | (note 2) |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~+150 | ||
| Maximum Lead Temperature for Soldering | TL | 260 | Duration for 5 Seconds | |
| Drain-Source Breakdown Voltage | V(BR)DSS | -50 | V | VGS = 0V, ID =-250A |
| Zero Gate Voltage Drain Current | IDSS | -15 | A | VDS =-50V,VGS = 0V |
| Zero Gate Voltage Drain Current | IDSS | -0.1 | A | VDS =-25V,VGS = 0V |
| Gate-Body Leakage Current | IGSS | 5 | A | VGS =20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -0.9 to -2 | V | VDS =VGS, ID =-250A (note 3) |
| Drain-Source On-Resistance | RDS(on)MAX | 8 | VGS =-10V, ID =-0.1A (note 3) | |
| Drain-Source On-Resistance | RDS(on) | 10 | VGS =-5V, ID =-0.1A (note 3) | |
| Forward Transconductance | gFS | 50 | mS | VDS=-25V; ID=-100mA (note 1) |
| Input Capacitance | Ciss | 30 | pF | VDS =5V,VGS =0V,f =1MHz (note 4) |
| Output Capacitance | Coss | 10 | pF | VDS =5V,VGS =0V,f =1MHz (note 4) |
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS =5V,VGS =0V,f =1MHz (note 4) |
| Turn-on Delay Time | td(on) | 2.5 | ns | VDD=-15V, RL=50, ID =-2.5A (note 4) |
| Turn-on Rise Time | tr | 1 | ns | VDD=-15V, RL=50, ID =-2.5A (note 4) |
| Turn-off Delay Time | td(off) | 16 | ns | VDD=-15V, RL=50, ID =-2.5A (note 4) |
| Turn-off Fall Time | tf | 8 | ns | VDD=-15V, RL=50, ID =-2.5A (note 4) |
| Continuous Current (Diode) | IS | -0.13 | A | |
| Pulsed Current (Diode) | ISM | -0.52 | A | |
| Diode Forward Voltage | VSD | -2.2 | V | IS=-0.13A, VGS = 0V (note 3) |
Notes:
1. Repetitive rating: Pulse width limited by junction temperature.
2. Surface mounted on FR4 board, t10s.
3. Pulse Test: Pulse Width300s, Duty Cycle2%.
4. Guaranteed by design, not subject to production.
2410121332_CBI-BSS84_C2919776.pdf
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