NPN Silicon Transistor Central CZT5551 TR Surface Mount SOT223 Package for High Voltage Amplifier Circuits

Key Attributes
Model Number: CZT5551 TR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
CZT5551 TR
Package:
SOT-223
Product Description

Product Overview

The CENTRAL SEMICONDUCTOR CZT5551 is an NPN silicon transistor manufactured using the epitaxial planar process. Encased in an epoxy-molded surface mount SOT-223 package, this transistor is specifically designed for high voltage amplifier applications. It offers reliable performance for demanding electronic circuits.

Product Attributes

  • Brand: CENTRAL SEMICONDUCTOR
  • Model: CZT5551
  • Type: NPN Silicon Transistor
  • Package: SOT-223
  • Manufacturing Process: Epitaxial Planar
  • Mounting Type: Surface Mount

Technical Specifications

Symbol Test Conditions Min Max Units
MAXIMUM RATINGS (TA=25C)
VCBO 180 V
VCEO 160 V
VEBO 6.0 V
IC 600 mA
PD 2.0 W
TJ, Tstg -65 +150 C
JA 62.5 C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
ICBO VCB=120V 50 nA
ICBO VCB=120V, TA=100C 50 A
IEBO VEB=4.0V 50 nA
BVCBO IC=100A 180 V
BVCEO IC=1.0mA 160 V
BVEBO IE=10A 6.0 V
VCE(SAT) IC=10mA, IB=1.0mA 0.15 V
VCE(SAT) IC=50mA, IB=5.0mA 0.20 V
VBE(SAT) IC=10mA, IB=1.0mA 1.00 V
VBE(SAT) IC=50mA, IB=5.0mA 1.00 V
hFE VCE=5.0V, IC=1.0mA 80
hFE VCE=5.0V, IC=10mA 80 250
hFE VCE=5.0V, IC=50mA 30
fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Cob VCB=10V, IE=0, f=1.0MHz 6.0 pF
Cib VEB=0.5V, IC=0, f=1.0MHz 20 pF
hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200
NF VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz 8.0 dB

All dimensions in inches (mm).

LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER


2410121636_Central-CZT5551-TR_C13636.pdf

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