NPN Silicon Transistor Central CZT5551 TR Surface Mount SOT223 Package for High Voltage Amplifier Circuits
Product Overview
The CENTRAL SEMICONDUCTOR CZT5551 is an NPN silicon transistor manufactured using the epitaxial planar process. Encased in an epoxy-molded surface mount SOT-223 package, this transistor is specifically designed for high voltage amplifier applications. It offers reliable performance for demanding electronic circuits.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Model: CZT5551
- Type: NPN Silicon Transistor
- Package: SOT-223
- Manufacturing Process: Epitaxial Planar
- Mounting Type: Surface Mount
Technical Specifications
| Symbol | Test Conditions | Min | Max | Units |
|---|---|---|---|---|
| MAXIMUM RATINGS (TA=25C) | ||||
| VCBO | 180 | V | ||
| VCEO | 160 | V | ||
| VEBO | 6.0 | V | ||
| IC | 600 | mA | ||
| PD | 2.0 | W | ||
| TJ, Tstg | -65 | +150 | C | |
| JA | 62.5 | C/W | ||
| ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) | ||||
| ICBO | VCB=120V | 50 | nA | |
| ICBO | VCB=120V, TA=100C | 50 | A | |
| IEBO | VEB=4.0V | 50 | nA | |
| BVCBO | IC=100A | 180 | V | |
| BVCEO | IC=1.0mA | 160 | V | |
| BVEBO | IE=10A | 6.0 | V | |
| VCE(SAT) | IC=10mA, IB=1.0mA | 0.15 | V | |
| VCE(SAT) | IC=50mA, IB=5.0mA | 0.20 | V | |
| VBE(SAT) | IC=10mA, IB=1.0mA | 1.00 | V | |
| VBE(SAT) | IC=50mA, IB=5.0mA | 1.00 | V | |
| hFE | VCE=5.0V, IC=1.0mA | 80 | ||
| hFE | VCE=5.0V, IC=10mA | 80 | 250 | |
| hFE | VCE=5.0V, IC=50mA | 30 | ||
| fT | VCE=10V, IC=10mA, f=100MHz | 100 | 300 | MHz |
| Cob | VCB=10V, IE=0, f=1.0MHz | 6.0 | pF | |
| Cib | VEB=0.5V, IC=0, f=1.0MHz | 20 | pF | |
| hfe | VCE=10V, IC=1.0mA, f=1.0kHz | 50 | 200 | |
| NF | VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz | 8.0 | dB | |
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER
2410121636_Central-CZT5551-TR_C13636.pdf
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