Plastic Encapsulated Zener Diode CBI BZT52C6V8S 200mW Power Dissipation Planar Die Construction

Key Attributes
Model Number: BZT52C6V8S
Product Custom Attributes
Impedance(Zzt):
15Ω
Diode Configuration:
Independent
Zener Voltage(Range):
6.4V~7.2V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
6.8V
Impedance(Zzk):
80Ω
Mfr. Part #:
BZT52C6V8S
Package:
SOD-323
Product Description

Product Overview

The BZT52C2V4S-BZT52C39S series are plastic-encapsulated Zener diodes designed for general-purpose, medium current applications. Featuring a planar die construction and 200mW power dissipation on a ceramic PCB, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version.

Product Attributes

  • Package Type: SOD-323
  • Construction: Planar die
  • Power Dissipation: 200mW on ceramic PBC
  • Assembly: Ideally suited for automated assembly processes
  • Lead Finish: Available in lead-free version

Technical Specifications

Model Marking Zener Voltage (Nominal) VZ @ IZT (V) Zener Voltage Range VZ @ IZT (V) Test Current IZT (mA) Max. Zener Impedance ZZT @ IZT () Max. Reverse Current IR @ VR (A) Forward Voltage VF @ IF = 10mA (V) Power Dissipation PD (mW) Thermal Resistance RJA (/W) Junction Temperature Tj () Storage Temperature Tstg () Typical Temperature Coefficient @ IZTC (mV/)
BZT52C2V4S WX 2.4 2.20 - 2.60 5 100 50 @ 1.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C2V7S W1 2.7 2.5 - 2.9 5 100 20 @ 1.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C3V0S W2 3.0 2.8 - 3.2 5 95 10 @ 1.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C3V3S W3 3.3 3.1 - 3.5 5 95 5 @ 1.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C3V6S W4 3.6 3.4 - 3.8 5 90 5 @ 1.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C3V9S W5 3.9 3.7 - 4.1 5 90 3 @ 1.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C4V3S W6 4.3 4.0 - 4.6 5 90 3 @ 1.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C4V7S W7 4.7 4.4 - 5.0 5 80 3 @ 2.0V 0.9 200 625 150 -55~+150 -3.5
BZT52C5V1S W8 5.1 4.8 - 5.4 5 60 2 @ 2.0V 0.9 200 625 150 -55~+150 -2.7
BZT52C5V6S W9 5.6 5.2 - 6.0 5 40 1 @ 2.0V 0.9 200 625 150 -55~+150 -2
BZT52C6V2S WA 6.2 5.8 - 6.6 5 10 3 @ 4.0V 0.9 200 625 150 -55~+150 0.4
BZT52C6V8S WB 6.8 6.4 - 7.2 5 15 2 @ 4.0V 0.9 200 625 150 -55~+150 1.2
BZT52C7V5S WC 7.5 7.0 - 7.9 5 15 1 @ 5.0V 0.9 200 625 150 -55~+150 2.5
BZT52C8V2S WD 8.2 7.7 - 8.7 5 15 0.7 @ 5.0V 0.9 200 625 150 -55~+150 3.2
BZT52C9V1S WE 9.1 8.5 - 9.6 5 15 0.5 @ 6.0V 0.9 200 625 150 -55~+150 3.8
BZT52C10S WF 10 9.4 - 10.6 5 20 0.2 @ 7.0V 0.9 200 625 150 -55~+150 4.5
BZT52C11S WG 11 10.4 - 11.6 5 20 0.1 @ 8.0V 0.9 200 625 150 -55~+150 5.4
BZT52C12S WH 12 11.4 - 12.7 5 25 0.1 @ 8.0V 0.9 200 625 150 -55~+150 6.0
BZT52C13S WI 13 12.4 - 14.1 5 30 0.1 @ 8.0V 0.9 200 625 150 -55~+150 7.0
BZT52C15S WJ 15 13.8 - 15.6 5 30 0.1 @ 10.5V 0.9 200 625 150 -55~+150 9.2
BZT52C16S WK 16 15.3 - 17.1 5 40 0.1 @ 11.2V 0.9 200 625 150 -55~+150 10.4
BZT52C18S WL 18 16.8 - 19.1 5 45 0.1 @ 12.6V 0.9 200 625 150 -55~+150 12.4
BZT52C20S WM 20 18.8 - 21.2 5 55 0.1 @ 14.0V 0.9 200 625 150 -55~+150 14.4
BZT52C22S WN 22 20.8 - 23.3 5 55 0.1 @ 15.4V 0.9 200 625 150 -55~+150 16.4
BZT52C24S WO 24 22.8 - 25.6 5 70 0.1 @ 16.8V 0.9 200 625 150 -55~+150 18.4
BZT52C27S WP 27 25.1 - 28.9 2 80 0.1 @ 18.9V 0.9 200 625 150 -55~+150 21.4
BZT52C30S WQ 30 28.0 - 32.0 2 80 0.1 @ 21.0V 0.9 200 625 150 -55~+150 24.4
BZT52C33S WR 33 31.0 - 35.0 2 80 0.1 @ 23.1V 0.9 200 625 150 -55~+150 27.4
BZT52C36S WS 36 34.0 - 38.0 2 90 0.1 @ 25.2V 0.9 200 625 150 -55~+150 30.4
BZT52C39S WT 39 37.0 - 41.0 2 130 0.1 @ 27.3V 0.9 200 625 150 -55~+150 33.4

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

2410121326_CBI-BZT52C6V8S_C2886370.pdf

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