TrenchFET Power MOSFET CBI BC2302W N Channel 20 Volt Suitable for DC DC Converter Applications
Key Attributes
Model Number:
BC2302W
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Pd - Power Dissipation:
350mW
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
BC2302W
Package:
SOT-323
Product Description
Product Overview
This N-Channel 20-V (D-S) TrenchFET Power MOSFET is designed for applications such as load switching in portable devices and DC/DC converters. It offers efficient power management with its advanced TrenchFET technology.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-323
- Technology: TrenchFET Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | 2.1 | A | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | 0.6 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 357 | °C/W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | ~+150 | °C | ||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =10µA | 20 | V | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.60 | 0.95 | 1.2 | V |
| Gate-body leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =20V, VGS =0V | 1 | µA | ||
| Drain-source on-resistance | rDS(on) | VGS =4.5V, ID =3.6A | 0.045 | 0.060 | Ω | |
| VGS =2.5V, ID =3.1A | 0.070 | 0.115 | Ω | |||
| Forward transconductance | gfs | VDS =5V, ID =3.6A | 8 | S | ||
| Diode forward voltage | VSD | IS=0.94A,VGS=0V | 0.76 | 1.2 | V | |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =3.6A | 4.0 | 10 | nC | |
| Gate-source charge | Qgs | 0.65 | nC | |||
| Gate-drain charge | Qgd | 1.5 | nC | |||
| Input capacitance | Ciss | VDS =10V,VGS =0V,f=1MHz | 300 | pF | ||
| Output capacitance | Coss | 120 | pF | |||
| Reverse transfer capacitance | Crss | 80 | pF | |||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω | 7 | 15 | ns | |
| Rise time | tr | 55 | 80 | ns | ||
| Turn-off delay time | td(off) | 16 | 60 | ns | ||
| Fall time | tf | 10 | 25 | ns | ||
2410121636_CBI-BC2302W_C21714188.pdf
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