Energy P channel MOSFET CBI BSS84W designed for portable and battery powered device power management
Key Attributes
Model Number:
BSS84W
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
10Ω@5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
200mW
Input Capacitance(Ciss):
30pF
Mfr. Part #:
BSS84W
Package:
SOT-323
Product Description
Product Overview
These miniature surface mount P-CHANNEL MOSFETs are designed to reduce power loss and conserve energy, making them ideal for small power management circuitry. They offer energy efficiency, low threshold voltage, and high-speed switching in a miniature surface mount package that saves board space. Applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and cordless telephones.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-323
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -50 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -0.13 | A | |||
| Pulsed Drain Current (note 1) | IDM | @tp <10 s | -0.52 | A | ||
| Power Dissipation | PD | 200 | mW | |||
| Thermal Resistance from Junction to Ambient (note 2) | RJA | 556 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds | TL | 260 | ||||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V (BR)DSS | VGS = 0V, ID =-250A | -50 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-50V,VGS = 0V | -15 | A | ||
| VDS =-25V,VGS = 0V | -0.1 | A | ||||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 5 | A | ||
| Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =-250A | -0.9 | -1.6 | -2 | V |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =-5V, ID =-0.1A | 5.8 | 10 | ||
| VGS =-10V, ID =-0.1A | 4.5 | 8 | ||||
| Forward transconductance (note 1) | gFS | VDS=-25V; ID=-100mA | 50 | mS | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 30 | pF | ||
| Output capacitance | Coss | pF | ||||
| Reverse transfer capacitance | Crss | 5 | pF | |||
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time | td(on) | VDD=-15V, RL=50, ID =-2.5A | 2.5 | ns | ||
| Turn-on rise time | tr | 1 | ns | |||
| Turn-off delay time | td(off) | 16 | ns | |||
| Turn-off fall time | tf | 8 | ns | |||
| SOURCEDRAIN DIODE CHARACTERISTICS | ||||||
| Continuous Current | IS | -0.13 | A | |||
| Pulsed Current | ISM | -0.52 | A | |||
| Diode forward voltage (note 3) | VSD | IS=-0.13A, VGS = 0V | -2.2 | V | ||
| Package | Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|---|
| SOT-323 | A | 0.90 | 1.00 | |
| A1 | 0.010 | 0.100 | ||
| B | 1.20 | 1.40 | ||
| bp | 0.25 | 0.45 | ||
| C | 0.09 | 0.15 | ||
| D | 2.00 | 2.20 | ||
| E | 1.15 | 1.35 | ||
| HE | 2.15 | 2.55 | ||
| Lp | 0.25 | 0.46 | ||
| 0 | 6 |
2410121536_CBI-BSS84W_C2919786.pdf
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