N channel enhancement mode MOSFET CBI BC1012T with low on resistance and high ESD protection up to 2kV
Key Attributes
Model Number:
BC1012T
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
630mA
RDS(on):
500mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Pd - Power Dissipation:
280mW
Mfr. Part #:
BC1012T
Package:
SOT-523
Product Description
Product Overview
This N-channel enhancement mode MOSFET is designed for surface mounting in a SOT-523 package. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for various electronic applications. Key features include low input/output leakage and ESD protection up to 2kV. The device is lead-free and RoHS compliant.
Product Attributes
- Packaging: Plastic-Encapsulate MOSFETS
- Package Type: SOT523
- Certifications: Lead Free By Design/RoHS Compliant
- ESD Protection: up to 2kV
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Maximum Ratings @TA = 25C unless otherwise specified | ||||
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate-Source Voltage | VGSS | 6 | V | |
| Continuous Drain Current (Note 1) Steady State TA = 25C | ID | 0.63 | A | |
| Continuous Drain Current (Note 1) Steady State TA = 85C | ID | 0.45 | A | |
| Pulsed Drain Current | IDM | 6 | A | |
| Thermal Characteristics @TA = 25C unless otherwise specified | ||||
| Total Power Dissipation (Note 1) | PD | 0.28 | W | |
| Thermal Resistance, Junction to Ambient | RJA | 452 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics @TA = 25C unless otherwise specified | ||||
| OFF CHARACTERISTICS (Note 4) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current TJ = 25C | IDSS | 100 | nA | VDS = 20V, VGS = 0V |
| Gate-Source Leakage | IGSS | 1.0 | A | VGS = 4.5V, VDS = 0V |
| ON CHARACTERISTICS (Note 4) | ||||
| Gate Threshold Voltage | VGS(th) | 0.5 - 1.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS (ON) | 0.3 - 0.4 | VGS = 4.5V, ID = 600mA | |
| Static Drain-Source On-Resistance | RDS (ON) | 0.4 - 0.5 | VGS = 2.5V, ID = 500mA | |
| Static Drain-Source On-Resistance | RDS (ON) | 0.5 - 0.7 | VGS = 1.8V, ID = 350mA | |
| Forward Transfer Admittance | |Yfs| | 1.4 | S | VDS = 10V, ID = 400mA |
| Diode Forward Voltage (Note 4) | VSD | 0.7 - 1.2 | V | VGS = 0V, IS = 150mA |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | 60.67 | pF | VDS =16V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 9.68 | pF | VDS =16V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 5.37 | pF | VDS =16V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 736.6 | pC | VGS =4.5V, VDS = 10V, ID =250mA |
| Gate-Source Charge | Qgs | 93.6 | pC | VGS =4.5V, VDS = 10V, ID =250mA |
| Gate-Drain Charge | Qgd | 116.6 | pC | VGS =4.5V, VDS = 10V, ID =250mA |
| Turn-On Delay Time | tD(on) | 5.1 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
| Turn-On Rise Time | tr | 7.4 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
| Turn-Off Delay Time | tD(off) | 26.7 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
| Turn-Off Fall Time | tf | 12.3 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
2410121546_CBI-BC1012T_C21714106.pdf
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