CET Chino Excel Tech CEH2288 N Channel Enhancement Mode FET with Low RDS ON and Compact TSOP6 Package
Key Attributes
Model Number:
CEH2288
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@2.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
2 N-Channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
125pF
Pd - Power Dissipation:
1.14W
Gate Charge(Qg):
8.2nC@5V
Mfr. Part #:
CEH2288
Package:
TSOP-6
Product Description
Product Overview
The CEH2288 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell design, offering extremely low RDS(ON). It provides a robust and reliable solution with key ratings of 20V and 5.2A, and low on-resistance values of 26m at VGS = 4.5V and 35m at VGS = 2.5V. This transistor is supplied in a TSOP-6 package.
Product Attributes
- Brand: CETsemi
- Package: TSOP-6
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Drain Current-Continuous | ID | 5.2 | A | TA = 25 C |
| Drain Current-Pulsed | IDM | 20 | A | a |
| Maximum Power Dissipation | PD | 1.14 | W | TA = 25 C |
| Operating and Store Temperature Range | TJ,Tstg | -55 to 150 | C | |
| Thermal Resistance, Junction-to-Ambient | RJA | 110 | C/W | b |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 20V, VGS = 0V |
| Gate Body Leakage Current, Forward | IGSSR | 100 | nA | VGS = 12V, VDS = 0V |
| Gate Body Leakage Current, Reverse | IGSSF | -100 | nA | VGS = -12V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 0.5 to 1.0 | V | VGS = VDS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | 26 | m | VGS = 4.5V, ID = 4.5A |
| Static Drain-Source On-Resistance | RDS(on) | 35 | m | VGS = 2.5V, ID = 3.5A |
| Forward Transconductance | gFS | 835 | mS | VDS = 5V, ID = 5.2A |
| Input Capacitance | Ciss | 1250 | pF | VDD = 10V, ID = 5.2A, VGS = 5V, RGEN = 3 |
| Reverse Transfer Capacitance | Coss | 125 | pF | VDS = 10V, ID = 5.2A, VGS = 4.5V |
| Output Capacitance | Crss | 95 | pF | VDS = 10V, VGS = 0V, f = 1.0 MHz |
| Turn-On Delay Time | td(on) | 10.7 | ns | |
| Turn-On Rise Time | tr | 3.8 | ns | |
| Turn-Off Delay Time | td(off) | 25.3 | ns | |
| Turn-Off Fall Time | tf | 2.8 | ns | |
| Total Gate Charge | Qg | 27 | nC | |
| Gate-Source Charge | Qgs | 10 | nC | |
| Gate-Drain Charge | Qgd | 6 | nC | |
| Drain-Source Diode Forward Current | IS | 5.2 | A | VGS = 0V |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 5.2A |
2409301933_CET-Chino-Excel-Tech-CEH2288_C154286.pdf
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