Fast switching diode ChipNobo BAV99 with less than 4nS reverse recovery time and low leakage current
Product Overview
This is a fast switching device with a switching speed less than 4nS and a reverse recovery time (TRR) of less than 4nS. It offers high stability and reliability, with low reverse leakage. The device has a maximum power dissipation of 225mW and is suitable for use in residential and commercial equipment. It is supplied in a SOT-23 small outline plastic package with a UL 94V-0 flammability rating and can be mounted in any position.
Product Attributes
- Brand: ChipNobo
- Package: SOT-23
- Material: Epoxy (UL 94V-0 flammability rating)
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Fast Switching Device (TRR) | <4nS | |||
| Power Dissipation | 225mW | |||
| Reverse Voltage | VR | 100 | V | |
| Power Dissipation | Pd | 225 | mW | |
| Operating Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Ts | -65 to +150 | ||
| Average Rectified Current | IO | 200 | mA | |
| Non-repetitive Peak Forward Current | IFM | 400 | mA | |
| Peak Forward Surge Current | IFSM | 1.0 | A | @ tp=1ms; TA=25 |
| Typical Thermal Resistance | RJA | 500 | /W | Valid provided that electrodes are kept at ambient temperature. |
| Reverse Voltage (Breakdown) | VRB | 100 | V | IB=100uA |
| Reverse Leakage Current | IR | 1.0 | uA | VR=100V |
| Forward Voltage | VF | 0.715 to 1.00 | V | IF=1mA to 50mA |
| Forward Voltage | VF | 1.25 | V | IF=150mA |
| Reverse Recovery Time | TRR | 4 | nS | IF= IR=10mA,RL=100, IRR=0.1xIR |
| Capacitance | CT | 1.5 | pF | VR=0V, f=1MHz |
2512121540_ChipNobo-BAV99_C52754123.pdf
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