CET Chino Excel Tech CEP9060N N Channel Enhancement Mode Transistor with TO 263 Package and 55V VDS
Key Attributes
Model Number:
CEP9060N
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
10.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.695nF
Output Capacitance(Coss):
765pF
Pd - Power Dissipation:
166W
Gate Charge(Qg):
90.5nC@10V
Mfr. Part #:
CEP9060N
Package:
TO-220
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor features a super high-density cell design for extremely low RDS(ON) and high power and current handling capability. Available in TO-220, TO-263, and TO-220F packages, this transistor is designed for efficient power management applications. It offers robust performance with high current and voltage ratings.
Product Attributes
- Lead-free product is acquired.
Technical Specifications
| Model | VDSS (V) | RDS(ON) (m) | ID @VGS (A) | Package |
|---|---|---|---|---|
| CEP9060N | 55 | 10.5 | 90A @ 10V | TO-263(DD-PAK) |
| CEB9060N | 55 | 10.5 | 90A @ 10V | TO-220 |
| CEF9060N | 55 | 10.5 | 90A @ 10V | TO-220F (full-pak) |
| Parameter | Symbol | Limit | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 55 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Drain Current-Continuous | ID | 90 | A | |
| Drain Current-Pulsed | IDM | 360 | A | |
| Maximum Power Dissipation @ TC = 25 C | PD | 166 | W | |
| Derate above 25 C | 1.11 | W/C | ||
| Operating and Store Temperature Range | TJ,Tstg | -55 to 175 | C | |
| Single Pulsed Avalanche Energy | EAS | 50 | mJ | IAS = 50A |
| Single Pulsed Avalanche Current | IAS | 325 | A | |
| Thermal Resistance, Junction-to-Case | RJC | 0.9 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C/W | |
| Drain-Source Breakdown Voltage | BVDSS | 55 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 55V, VGS = 0V |
| Gate Body Leakage Current, Forward | IGSSR | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Body Leakage Current, Reverse | IGSSF | 100 | nA | VGS = -20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2 | V | VGS = VDS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | 10.5 | m | VGS = 10V, ID = 62A |
| Forward Transconductance | gFS | 49 | S | VDS = 25V, ID = 62A |
| Input Capacitance | Ciss | 3695 | pF | VDS = 25V, VGS = 0V, f = 1.0 MHz |
| Reverse Transfer Capacitance | Crss | 765 | pF | |
| Output Capacitance | Coss | 360 | pF | |
| Turn-On Delay Time | td(on) | 24 | ns | VDD = 28V, ID = 62A, VGS = 10V, RGEN = 4.5 |
| Turn-On Rise Time | tr | 60 | ns | |
| Turn-Off Delay Time | td(off) | 11.9 | ns | VDS = 44V, ID = 62A, VGS = 10V |
| Turn-Off Fall Time | tf | 60 | ns | |
| Total Gate Charge | Qg | 19 | nC | |
| Gate-Source Charge | Qgs | 48 | nC | |
| Gate-Drain Charge | Qgd | 23.8 | nC | |
| Drain-Source Diode Forward Current | IS | 90 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0V, IS = 62A |
2410122025_CET-Chino-Excel-Tech-CEP9060N_C154258.pdf
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