general purpose NPN transistor Comchip AMMBT3904-HF with tin plated leads and UL-94 V-0 epoxy rating

Key Attributes
Model Number: AMMBT3904-HF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Type:
NPN
Current - Collector(Ic):
200mA
Number:
1 NPN
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
AMMBT3904-HF
Package:
SOT-23
Product Description

Product Overview

The AMMBT3904-HF is a RoHS compliant, Halogen Free NPN general purpose transistor from Comchip Technology CO., LTD. Encased in a molded SOT-23 plastic package with tin-plated leads, this AEC-Q101 qualified transistor features epoxy that meets UL-94 V-0 flammability rating and is moisture sensitive level 1. It is designed for general-purpose applications requiring reliable performance.

Product Attributes

  • Brand: Comchip Technology CO., LTD.
  • Product Type: General Purpose Transistor
  • Transistor Type: NPN
  • Compliance: RoHS Device, Halogen Free
  • Case: SOT-23, molded plastic
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • Flammability Rating: Epoxy meets UL-94 V-0
  • Moisture Sensitivity Level: 1
  • Qualification: AEC-Q101 Qualified
  • Marking Code: 1AMY

Technical Specifications

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage 40 V
VCEO Collector-emitter voltage 60 V
VEBO Emitter-base voltage 6 V
IC Collector current-continuous 200 mA
PD Total device dissipation (at TA=25C unless otherwise noted) 300 mW
TJ Junction temperature range -55 +150 C
TSTG Storage temperature range -55 +150 C
RJA Thermal resistance junction to ambient 357 K/W
V(BR)CBO Collector-base breakdown voltage IC = 10Adc, IE = 0 50 Vdc
V(BR)CEO Collector-emitter breakdown voltage IC = 1mAdc, IB = 0 60 Vdc
V(BR)EBO Emitter-base breakdown voltage IE = 10Adc, IC = 0 6 Vdc
ICEX Collector cut-off current VCE = 30Vdc, VEB = 3Vdc 50 nAdc
ICBO Collector cut-off current VCB = 60Vdc, IE = 0 50 nAdc
hFE(1) DC current gain VCE = 1Vdc, IC = 0.1mAdc 300
hFE(2) DC current gain VCE = 1Vdc, IC = 1mAdc 40 70
hFE(3) DC current gain VCE = 1Vdc, IC = 10mAdc 100
hFE(4) DC current gain VCE = 1Vdc, IC = 50mAdc 60
hFE(5) DC current gain VCE = 1Vdc, IC = 100mAdc 30
VCE(sat) Collector-emitter saturation voltage IC = 50mAdc, IB = 5mAdc 0.2 Vdc
VCE(sat) Collector-emitter saturation voltage IC = 10mAdc, IB = 1mAdc 0.3 Vdc
VBE(sat) Base-emitter saturation voltage IC = 50mAdc, IB = 5mAdc 0.95 Vdc
VBE(sat) Base-emitter saturation voltage IC = 10mAdc, IB = 1mAdc 0.85 Vdc
Cibo Input capacitance VEB = 0.5Vdc, f = 1MHz, IC = 0 8.0 pF
Cobo Output capacitance VCB = 5Vdc, f = 1MHz, IE = 0 4.0 pF
td Delay time VCC = 3Vdc, VBE = 0.5Vdc, IC = 10mAdc, IB1 = 1mAdc 35 ns
tr Rise time VCC = 3Vdc, IC = 10mAdc, IB1 = IB2 = 1mAdc 35 ns
ts Storage time VCC = 3Vdc, IC = 10mAdc, IB1 = IB2 = 1mAdc 200 ns
tf Fall time VCC = 3Vdc, IC = 10mAdc, IB1 = IB2 = 1mAdc 50 ns

Dimensions (SOT-23)

Symbol Inches Millimeters
A 0.118(3.00) - 0.110(2.80) 3.00 0.10
B 0.079(2.00) - 0.071(1.80) 2.77 0.10
C 0.041(1.05) - 0.035(0.90) 1.22 0.10
D 0.055(1.40) - 0.047(1.20) 1.50 + 0.10/-0.00
E 0.020(0.50) - 0.012(0.30) 0.50 0.10
F 0.008(0.20) - 0.004(0.10) 0.10 0.05
P 0.100(2.55) - 0.089(2.25) 4.00 0.10
P0 0.020(0.50) - 0.012(0.30) 4.00 0.10
P1 2.00 0.05
W 8.00 +0.30/-0.10
W1 11.10 0.20

Standard Packaging

Case Type Packaging Reel Size (inch) Quantity (pcs)
SOT-23 REEL 7 3,000

Suggested P.C.B. PAD Layout (SOT-23)

Component Size (inch) Size (mm)
A 0.035 0.90
B 0.031 0.80
C 0.037 0.95
D 2.00 0.079
E 2.90 0.114

Note: The pad layout is for reference purposes only.


2410010102_Comchip-AMMBT3904-HF_C3019741.pdf

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