Medium Power NPN Transistor DIODES ZXTN2031FTA with 5A Collector Current and Green Lead Free Package
Key Attributes
Model Number:
ZXTN2031FTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
1.2W
Transition Frequency(fT):
125MHz
Type:
NPN
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTN2031FTA
Package:
SOT-23
Product Description
Product Overview
The ZXTN2031F is a 50V NPN medium power transistor in a SOT23 package, offering high continuous collector current (IC = 5A) and peak collector current (ICM = 12A). It features low saturation voltage (VCE(SAT) < 40mV @1A) and low equivalent on-resistance (RCE(SAT) = 24m). This device is AEC-Q101 qualified, totally lead-free, and RoHS compliant, making it a green device suitable for various applications including MOSFET and IGBT gate driving, motor drives, relay lamp and solenoid drives, and DC-DC converters.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, Green Molding Compound
- Certifications: AEC-Q101 Qualified, Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Complementary PNP Type: ZXTP2025F
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 80 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEV | 80 | V | IC = 1A, -1V < VBE < +0.3V |
| Collector-Emitter Breakdown Voltage | BVCEO | 50 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Emitter Cut-Off Current | ICEV | <1 | nA | VCE = 60V, VBE = -1V |
| Collector - Base Cut-Off Current | ICBO | <1 | nA | VCB = 60V |
| Emitter Cut-off Current | IEBO | <1 | nA | VEB = 6V |
| Static Forward Current Transfer Ratio | hFE | 190-560 | - | IC = 10mA to 5A, VCE = 2V |
| Collector-Emitter Saturation Voltage | VCE(sat) | <40 | mV | IC = 1A, IB = 100mA (Typ.) |
| Base-Emitter Saturation Voltage | VBE(sat) | 800-1000 | mV | IC = 2A to 5A, IB = 40mA to 250mA |
| Base-Emitter Turn-On Voltage | VBE(on) | 830-930 | mV | IC = 5A, VCE = 2V |
| Transition Frequency | FT | 125 | MHz | IC = 500mA, VCE = 10V, f=50MHz |
| Output Capacitance | Cobo | 29 | pF | VCB = 10V, f=1MHz |
| Delay Time | t(d) | 16 | ns | VCC = 12V, IC = 2.5A, IB1 = 125mA |
| Rise Time | t(r) | 27 | ns | VCC = 12V, IC = 2.5A, IB1 = 125mA |
| Storage Time | t(stg) | 468 | ns | VCC = 12V, IC = 2.5A, IB1 = 125mA |
| Fall Time | t(f) | 44 | ns | VCC = 12V, IC = 2.5A, IB1 = 125mA |
| Continuous Collector Current | IC | 5 | A | @TA = +25C |
| Peak Collector Current | ICM | 12 | A | @TA = +25C |
| Base Current | IB | 1.2 | A | @TA = +25C |
| Power Dissipation | PD | 1.0 | W | @TA = +25C (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 125 | C/W | (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
1809081631_DIODES-ZXTN2031FTA_C92166.pdf
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