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quality Power Management MOSFET ChipNobo IRFB4410ZPBF-CN N Channel Low RDS ON for Fast Recovery Applications factory
quality Power Management MOSFET ChipNobo IRFB4410ZPBF-CN N Channel Low RDS ON for Fast Recovery Applications factory

Power Management MOSFET ChipNobo IRFB4410ZPBF-CN N Channel Low RDS ON for Fast Recovery Applications

Key Attributes
Model Number: IRFB4410ZPBF-CN
Product Custom Attributes
Mfr. Part #:
IRFB4410ZPBF-CN
Package:
TO-220
Product Description

Product Overview

The IRFB4410ZPBF-CN is a high-performance N-channel MOSFET featuring proprietary New Trench Technology. It offers a low typical on-resistance (RDS(ON)) of 7.4 m at VGS=10V and an excellent Figure of Merit (FOM). The device is designed for fast recovery body diode applications, making it suitable for synchronous rectification, power management, DC/DC converters, and motor drives.

Product Attributes

  • Brand: ChipNobo (implied by context and notice)
  • Package: TO-220
  • Ordering Part Number: IRFB4410ZPBF-CN

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
General Features
RDS(ON) VGS=10V 7.4 m
Absolute Maximum Ratings
Drain-to-Source Voltage VDSS TC=25 100 V
Gate-to-Source Voltage VGSS 20 V
Continuous Drain Current ID TC=25 80 A
Continuous Drain Current @ Tc=100 ID 60 A
Pulsed Drain Current @ VGS=10V IDM 300 A
Single Pulse Avalanche Energy L=1mH EAS 360 mJ
Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation PD TC=25 101 W
Derating Factor above 25 0.8 W/
Maximum Temperature for Soldering Leads TL 0.063in (1.6mm) from Case for 10 seconds 300
Maximum Temperature for Soldering Package Body TPAK for 10 seconds 260
Operating and Storage Temperature Range TJ & TSTG -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RJC 1.24 /W
Thermal Resistance, Junction-to-Ambient RJA 62 /W
OFF Characteristics
Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 100 V
Drain-to-Source Leakage Current IDSS VDS=100V, VGS=0V 1 uA
Drain-to-Source Leakage Current IDSS VDS=80V, VGS=0V, TJ =125 100 uA
Gate-to-Source Leakage Current IGSS VGS=+20V, VDS=0V 100 nA
Gate-to-Source Leakage Current IGSS VGS=-20V, VDS=0V -100 nA
ON Characteristics
Static Drain-to-Source On-Resistance RDS(ON) VGS=10V, ID=35A 7.4 8.8 m
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250uA 2.0 4.0 V
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=50V, f=1.0MHZ 2184 pF
Reverse Transfer Capacitance Crss 50 pF
Output Capacitance Coss 312 pF
Total Gate Charge Qg VDD=50V, ID=35A, VGS=10V 34 nC
Gate-to-Source Charge Qgs 10.5 nC
Gate-to-Drain (Miller) Charge Qgd 8.3 nC
Resistive Switching Characteristics
Turn-on Delay Time td(ON) VDD=50V, ID=35A, VGS= 10V, RG=2.5 18.6 ns
Rise Time trise 6.2 ns
Turn-Off Delay Time td(OFF) 31.3 ns
Fall Time tfall 7.7 ns
Source-Drain Body Diode Characteristics
Continuous Source Current ISD 80 A
Pulsed Source Current ISM 300 A
Diode Forward Voltage VSD IS=80A, VGS=0V 1.2 V
Reverse recovery time trr VGS=0V ,IF=35A, diF/dt=100A/s 62.6 ns
Reverse recovery charge Qrr 71 nC

For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.


2507091655_ChipNobo-IRFB4410ZPBF-CN_C42436816.pdf

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