N channel MOSFET ChipNobo SUD50P06-15-GE3-CN with TO 252 2L Package and 9mOhm Typical On Resistance
Product Overview
This N-channel MOSFET is designed for high-performance applications, offering a maximum drain-source voltage of -60V and a continuous drain current of up to -80A at 25. It features a low static drain-source on-resistance of less than 11m at VGS=-10V, with a typical value of 9m. Key applications include lithium battery protection, wireless charging, and mobile phone fast charging. The device is housed in a TO-252-2L package, suitable for surface-mounted designs.
Product Attributes
- Brand: ChipNobo
- Package Type: TO-252-2L
Technical Specifications
Absolute Maximum Ratings (TC=25 unless otherwise noted)
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | -60 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -80 | A |
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -50 | A |
| IDM | Pulsed Drain Current2 | -320 | A |
| EAS | Single Pulse Avalanche Energy3 | 450 | mJ |
| IAS | Avalanche Current | 41 | A |
| PD@TC=25 | Total Power Dissipation4 | 110 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| RJA | Thermal Resistance Junction-Ambient1 | 1.1 | /W |
| RJC | Thermal Resistance Junction-Case1 | 60 | /W |
General Features
- VDS = -60V
- ID =-80A
- RDS(ON) < 11m @ VGS=-10V (Type9m)
Electrical Characteristics (TC=25 unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | -68 | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | --- | -0.035 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | --- | 9.0 | 12 | m |
| VGS=-4.5V , ID=-15A | --- | 12 | 16 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.28 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-60V , VGS=0V , TJ =25 | --- | --- | 1 | uA |
| VDS=-60V , VGS=0V , TJ =55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-20A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.0 | --- | |
| Qg | Total Gate Charge (-4.5V) | VDS=-30V , VGS=-10V , ID=-20A | --- | 56 | --- | nC |
| Qgs | Gate-Source Charge | --- | 11 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 9 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=3, ID=-20A | --- | 4.5 | --- | ns |
| Tr | Rise Time | --- | 2.5 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 14.5 | --- | ns | |
| Tf | Fall Time | --- | 3.8 | --- | ns | |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 3500 | --- | pF |
| Coss | Output Capacitance | --- | 600 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 25 | --- | pF | |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -80 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -240 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
Notes:
- 1 The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
- 2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
- 3 The EAS data shows Max. rating. The test condition is VDD =-48V, VGS =-10V, L=0.1mH, IAS =-41A.
- 4 The power dissipation is limited by 150 junction temperature.
- 5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Package Information: TO-252-2L
| SYMBOL | MILLIMETER | MIN | TYP | MAX |
|---|---|---|---|---|
| A | 2.200 | 2.300 | 2.400 | |
| A1 | 0.000 | 0.127 | ||
| b | 0.640 | 0.690 | 0.740 | |
| D | 6.500 | 6.600 | 6.700 | |
| D1 | 5.334 REF | |||
| D2 | 6.000 | 6.100 | 6.200 | |
| D3 | 4.826 REF | |||
| E | 9.900 | 10.100 | 10.300 | |
| e | 3.166 REF | |||
| e7 | <3 | |||
| h | 2.286 TYP | |||
| L | 1.400 | 1.550 | 1.700 | |
| L1 | 0.600 | 0.800 | 1.000 | |
| L2 | 1.100 | 1.200 | 1.300 | |
| L3 | 2.888 REF | |||
| L4 | 1.600 REF |
Disclaimer: The information presented in this document is for reference only. ChipNobo reserves the right to adjust product indicators and upgrade technical parameters for product optimization and productivity improvement. ChipNobo is exempt from liability for any delays or non-delivery of information disclosure.
Usage Advisory: The product is designed for residential and commercial equipment and does not support sensitive items or specialized equipment in areas with sanctions. ChipNobo Co., Ltd assumes no responsibility or liability for any damages resulting from improper use.
For additional information, please visit www.chipnobo.com or consult your nearest Chipnobo sales office.
2507091655_ChipNobo-SUD50P06-15-GE3-CN_C42436828.pdf
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