N Channel mosfet Chongqing Pingwei Tech 12N65TF with TO 220TF package and high avalanche energy tolerance
Key Attributes
Model Number:
12N65TF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.107nF@25V
Pd - Power Dissipation:
33W
Gate Charge(Qg):
58nC@480V
Mfr. Part #:
12N65TF
Package:
TO-220TF-3
Product Description
Product Overview
The 12N65TF is an N-Channel MOSFET designed for efficient power switching applications. It features a 12A continuous drain current rating and a 650V drain-source voltage. Key advantages include low gate charge, low Ciss, and fast switching speeds, making it suitable for applications requiring high performance and reliability. The device is 100% avalanche tested and offers improved dv/dt capability, housed in a TO-220TF package.
Product Attributes
- Brand: Perfectway
- Model: 12N65TF
- Package: TO-220TF
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Continuous Drain Current | ID | 12 | A | |||
| Pulsed Drain Current | IDM | (Note1) | 48 | A | ||
| Single Pulse Avalanche Energy | EAS | (Note 2) | 900 | mJ | ||
| Avalanche Current | IAR | (Note1) | 12 | A | ||
| Repetitive Avalanche Energy | EAR | (Note1) | 33 | mJ | ||
| Reverse Diode dV/dt | dv/dt | (Note 3) | 5.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds | TL | 260 | ||||
| Mounting Torque 6-32 or M3 screw | 1.1 | Nm | ||||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Case | Rth(J-c) | 3.81 | /W | |||
| Maximum Power Dissipation | PD | TC=25 | 33 | W | ||
| Electrical Characteristics (Tc=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 650 | - | - | V |
| Breakdown Temperature Coefficient | BVDSS /TJ | Reference to 25, ID=250uA | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current, Forward | IGSSF | VGS=30V,VDS=0V | - | - | 10 | A |
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V,VDS=0V | - | - | -10 | A |
| Gate-Source Threshold Voltage | VGS(th) | VDS=10V,ID=250uA | 2 | - | 4 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=6A | - | 0.60 | 0.75 | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHZ | - | 2107 | - | pF |
| Output Capacitance | Coss | - | 195 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 16 | - | pF | |
| Turn-On Delay Time | td(on) | VDD=300V,ID=12A, RG=4.7 (Note4,5) | - | 20 | - | ns |
| Turn-On Rise Time | tr | - | 28 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 55 | - | ns | |
| Turn-Off Fall Time | tf | - | 30 | - | ns | |
| Total Gate Charge | Qg | VDS=480V,ID=12A, VGS=10V, (Note4,5) | - | 58 | - | nC |
| Gate-Source Charge | Qgs | - | 14 | - | nC | |
| Gate-Drain Charge | Qg | - | 32 | - | nC | |
| Drain-Source Body Diode Characteristics and Maximum Ratings | ||||||
| Diode Forward Voltage | VSD | IS=12A,VGS=0V | - | - | 1.5 | V |
| Reverse Recovery Time | trr | VGS=0V,IS=12A, dIF/dt=100A/us, (Note4) | - | 600 | - | ns |
| Reverse Recovery Charge | Qrr | - | 43 | - | C | |
Package Dimensions (TO-220TF)
| Dimension | Min | Max |
|---|---|---|
| A | .590(15.0) | .650(16.5) |
| B | .393(10.0) | .414(10.5) |
| C | .118(3.00) | .138(3.50) |
| D | .118(3.00) | .146(3.70) |
| E | .512(13.0) | .551(14.0) |
| F | .028(0.70) | .035(0.90) |
| G | .114(2.90) | .138(3.50) |
| H | .255(6.50) | .280(7.10) |
| I | .173(4.40) | .197(5.00) |
| J | .102(2.60) | .110(2.80) |
| K | .018(0.45) | .026(0.65) |
| L | .092(2.35) | .109(2.75) |
| P | .890(2.25) | .113(2.85) |
2410122028_Chongqing-Pingwei-Tech-12N65TF_C432592.pdf
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