Halogen Free and Pb Free Lead Plating Power MOSFET CYSTECH MTC3587DL8 for Power Management Solutions
Key Attributes
Model Number:
MTC3587DL8
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
74pF
Input Capacitance(Ciss):
1.048nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11.6nC@4.5V
Mfr. Part #:
MTC3587DL8
Package:
DFNWB-8-EP(2x3)
Product Description
Product Overview
The CYStek MTC3587DL8 is an N- and P-Channel Enhancement Mode Power MOSFET designed for simple drive requirements, low gate charge, low on-resistance, and fast switching speeds. It features Pb-free lead plating and a halogen-free package, making it an environmentally friendly choice. This device is suitable for various power management applications.
Product Attributes
- Brand: CYStek
- Certifications: Pb-free lead plating, Halogen-free package, RoHS compliant
- Environmentally friendly grade: S for RoHS compliant products, G for RoHS compliant and green compound products
Technical Specifications
| Device | Package | BVDSS (V) | ID @ TA=25C (A) | RDSON (TYP.) (m) | Ordering Information |
| MTC3587DL8 (N-CH) | DFNWB32-8L-B | 20 | 4.9 (VGS=4.5V) | 32 (VGS=4.5V) | MTC3587DL8-0-T1-G (3000 pcs / tape & reel) |
| MTC3587DL8 (P-CH) | -20 | -3.9 (VGS=-4.5V) | 50 (VGS=-4.5V) |
| Parameter | Symbol | N-channel (Q1) Limit | P-channel (Q2) Limit | Unit | Test Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 20 | -20 | V | VGS=0V, ID=250A |
| Gate-Source Voltage | VGS | 8 | V | ||
| Continuous Drain Current @TA=25 C | ID | 4.9 | -3.9 | A | Note 1 |
| Continuous Drain Current @TA=70 C | ID | 3.9 | -3.1 | A | Note 1 |
| Pulsed Drain Current | IDM | 30 | -23 | A | Note 2 |
| Maximum Power Dissipation @TA=25C | PD | 1.5 | W | Note 1 | |
| Maximum Power Dissipation @TA=70C | PD | 0.96 | W | Note 1 | |
| Operating Junction and Storage Temperature | Tj, Tstg | -55~+150 | C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 85 | C/W | Note 1 | |
| Thermal Resistance, Junction-to-Case | RJC | 25 | C/W | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 32 (VGS=4.5V) | 50 (VGS=-4.5V) | m | ID=4.4A (N-CH), ID=-3.2A (P-CH) |
| 43 (VGS=2.5V) | 62 (VGS=-2.5V) | m | ID=4.1A (N-CH), ID=-2.5A (P-CH) | ||
| 62 (VGS=1.8V) | 81 (VGS=-1.8V) | m | ID=1.9A (N-CH), ID=-1A (P-CH) | ||
| Gate Charge (Total) | Qg | 5.9 (Typ.) | 11.6 (Typ.) | nC | VDS=10V, ID=4.4A (N-CH), ID=-3.2A (P-CH), VGS=4.5V (N-CH), VGS=-4.5V (P-CH) |
Note: 1.Surface mounted on 1 in copper pad of FR-4 board, t5 sec. 2.Pulse width limited by maximum junction temperature.
2410121913_CYSTECH-MTC3587DL8_C373365.pdf
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