High Current NPN Darlington Transistor DIODES FZT600TA Featuring SOT223 Package and Green Compliance

Key Attributes
Model Number: FZT600TA
Product Custom Attributes
Current - Collector Cutoff:
-
Pd - Power Dissipation:
2W
DC Current Gain:
2000
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
140V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
FZT600TA
Package:
SOT-223
Product Description

FZT600 / FZT600B 140V NPN Darlington Transistor in SOT223

The FZT600/FZT600B are high-performance NPN Darlington transistors designed for applications requiring high voltage and high current capabilities. These devices offer a high continuous collector current of 2A and a significant DC current gain greater than 10k, guaranteed up to 1A. Their robust construction and AEC-Q101 qualification ensure high reliability, making them suitable for demanding electronic circuits. The SOT223 package provides efficient heat dissipation and ease of integration into PCB designs.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT223 (Type DN)
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to AEC-Q101 Standards
  • Lead Finish: Matte Tin Plated

Technical Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Absolute Maximum Ratings
Collector-Base Voltage VCBO 160 V @TA = +25C
Collector-Emitter Voltage VCEO 140 V @TA = +25C
Emitter-Base Voltage VEBO 10 V @TA = +25C
Continuous Collector Current IC 2 A @TA = +25C
Peak Pulse Current ICM 4 A @TA = +25C
Electrical Characteristics
Collector-Base Breakdown Voltage BVCBO 160 V IC = 100A
Collector-Emitter Breakdown Voltage BVCEO 140 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 10 V IE = 100A
Collector-Base Cut-Off Current ICBO 0.01 A VCB = 140V
Collector-Emitter Cut-Off Current ICES 10 A VCES = 140V
DC Current Gain (FZT600) hFE 1000 100,000 IC = 50mA, VCE = 10V
DC Current Gain (FZT600B) hFE 5000 100,000 IC = 500mA, VCE = 10V
Collector-Emitter Saturation Voltage VCE(sat) 0.75 1.2 V IC = 1A, IB = 10mA
Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 V IC = 1A, IB = 10mA
Output Capacitance Cobo 10 15 pF VCB = 10V, f = 1MHz
Current Gain-Bandwidth Product fT 150 250 MHz VCE = 10V, IC = 100mA, f=20MHz
Turn-On Time ton 0.75 s VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA
Turn-Off Time toff 2.20 s VCC = 10V, IC = 500mA, IB1 = -IB2 = 0.5mA

2412251006_DIODES-FZT600TA_C154767.pdf

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