Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for Motor and Gate Driving
Key Attributes
Model Number:
ZXTP2012ZTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
1.5W
Transition Frequency(fT):
120MHz
Type:
PNP
Current - Collector(Ic):
4.3A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTP2012ZTA
Package:
SOT-89
Product Description
Product Overview
The ZXTP2012Z is a 60V PNP low saturation transistor in a SOT89 package, offering high continuous current capability of up to -4.3A and a low equivalent on-resistance (RSAT = 32m). It features a low saturation voltage (VCE(sat) < -65mV @ IC = -1A) and specified hFE up to -10A for high current gain hold-up. This device is suitable for various applications including emergency lighting, motor driving, backlight inverters, power switches, and gate driving MOSFETs and IGBTs. It is a 'Green' device, totally lead-free, and fully RoHS compliant.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT89
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Complementary NPN Type: DIODES ZXTN2010Z
- Automotive-Compliant Part Available: ZXTP2012ZQ
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -100 | V | |
| Collector-Emitter Voltage | VCEO | -60 | V | |
| Emitter-Base Voltage | VEBO | -7 | V | |
| Base Current | IB | -2 | A | |
| Continuous Collector Current | IC | -4.3 | A | |
| Peak Pulse Current | ICM | -15 | A | |
| Power Dissipation (Note 5) | PD | 1.8 | W | |
| Power Dissipation (Note 6) | PD | 1.5 | W | |
| Power Dissipation (Note 7) | PD | 2.1 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 125 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 83 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 7) | RJA | 60 | C/W | |
| Thermal Resistance, Junction to Case (Note 5) | RJC | 21 | C/W | |
| Thermal Resistance, Junction to Leads (Note 8) | RJL | 3.23 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Collector-Base Breakdown Voltage | BVCBO | -100 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage (Note 9) | BVCER | -100 | V | IC = -1A, RB 1k |
| Collector-Emitter Breakdown Voltage (Note 9) | BVCEO | -60 | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector Cutoff Current | ICBO | -1 | nA | VCB = -80V |
| Collector Cutoff Current | ICBO | -500 | nA | VCB = -80V, TA = +100C |
| Collector Cutoff Current | ICER | -1 | nA | VCB = -80V, R 1k |
| Collector Cutoff Current | ICER | -500 | nA | VCB = -80V, TA = +100C, R 1k |
| Emitter Cutoff Current | IEBO | -1 | nA | VEB = -6V |
| DC Current Transfer Static Ratio (Note 9) | hFE | 100 | IC = -10mA, VCE = -1V | |
| DC Current Transfer Static Ratio (Note 9) | hFE | 250 | IC = -2A, VCE = -1V | |
| DC Current Transfer Static Ratio (Note 9) | hFE | 90 | IC = -5A, VCE = -1V | |
| DC Current Transfer Static Ratio (Note 9) | hFE | 30 | IC = -10A, VCE = -1V | |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | -14 | mV | IC = -100mA, IB = -10mA |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | -65 | mV | IC = -1A, IB = -100mA |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | -110 | mV | IC = -2A, IB = -200mA |
| Collector-Emitter Saturation Voltage (Note 9) | VCE(sat) | -215 | mV | IC = -5A, IB = -500mA |
| Base-Emitter Saturation Voltage (Note 9) | VBE(sat) | -950 | mV | IC = -5A, IB = -500mA |
| Base-Emitter Turn-on Voltage (Note 9) | VBE(on) | -840 | mV | IC = -5A, VCE = -1V |
| Transitional Frequency (Note 9) | fT | 120 | MHz | IC = -100mA, VCE = -10V, f = 50MHz |
| Output Capacitance | Cobo | 48 | pF | VCB = -10V, f = 1MHz |
| Switching Time | ton | 39 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA |
| Switching Time | toff | 370 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA |
2412251000_DIODES-ZXTP2012ZTA_C122574.pdf
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