Medium Power PNP Transistor DIODES ZX5T951GTC with Low Saturation Voltage and AEC Q101 Qualification
Key Attributes
Model Number:
ZX5T951GTC
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
120MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
5.5A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZX5T951GTC
Package:
SOT-223
Product Description
ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
The ZX5T951G is a 60V PNP medium power transistor designed for low saturation applications. It offers a high continuous collector current of -5.5A and a peak pulse current of -15A, with a low saturation voltage of less than -70mV at -1A. Its low equivalent on-resistance (RSAT = 39m) and specified hFE up to -10A make it suitable for high gain hold-up applications. This device is complementary to the NPN type ZX5T851G and is qualified to AEC-Q101 standards for high reliability. It is also lead-free, RoHS compliant, and halogen and antimony free, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Complementary NPN Type: ZX5T851G
- Certifications: AEC-Q101 Standards, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Material: Molded Plastic ("Green" Molding Compound), Matte Tin Plated Leads
- Flammability Rating: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Features | ||||
| Breakdown Voltage Collector-Emitter | BVCEO | > -60 | V | |
| High Continuous Collector Current | IC | -5.5 | A | |
| Peak Pulse Current | ICM | -15 | A | |
| Low Saturation Voltage | VCE(sat) | < -70 | mV | @ -1A |
| Low Equivalent On-Resistance | RSAT | 39 | m | |
| hFE Specified Up To | -10 | A | ||
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -100 | V | |
| Collector-Emitter Voltage | VCEO | -60 | V | |
| Emitter-Base Voltage | VEBO | -7 | V | |
| Continuous Collector Current | IC | -5.5 | A | @TA = +25C |
| Peak Pulse Current | ICM | -15 | A | @TA = +25C |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 3.0 | W | @TA = +25C (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 42 | C/W | (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -100 | V | IC = -100A |
| Collector-Emitter Breakdown Voltage | BVCER | -100 | V | IC = -1A, RB 1k |
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | V | IC = -10mA (Note 9) |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | V | IE = -100A |
| Collector-Base Cutoff Current | ICBO | <1 | nA | VCB = -80V, TA = +25C |
| Collector-Emitter Cutoff Current | ICER | <1 | nA | R 1k, VCB = -80V, TA = +25C |
| Emitter Cutoff Current | IEBO | <1 | nA | VEB = -6V |
| Static Forward Current Transfer Ratio | hFE | 100 | - | IC = -10mA, VCE = -1V |
| Static Forward Current Transfer Ratio | hFE | 100 | - | IC = -2A, VCE = -1V |
| Static Forward Current Transfer Ratio | hFE | 45 | - | IC = -5A, VCE = -1V |
| Static Forward Current Transfer Ratio | hFE | 10 | - | IC = -10A, VCE = -1V |
| Collector-Emitter Saturation Voltage | VCE(sat) | -15 | mV | IC = -100mA, IB = -10mA (Note 9) |
| Collector-Emitter Saturation Voltage | VCE(sat) | -70 | mV | IC = -1A, IB = -100mA (Note 9) |
| Collector-Emitter Saturation Voltage | VCE(sat) | -250 | mV | IC = -5A, IB = -500mA (Note 9) |
| Base-Emitter Saturation Voltage | VBE(sat) | -1,150 | mV | IC = -5A, IB = -500mA (Note 9) |
| Base-Emitter Turn-On Voltage | VBE(on) | -1,020 | mV | IC = -5A, VCE = -1V (Note 9) |
| Output Capacitance | Cobo | 48 | pF | VCB = -10V. f = 1MHz (Note 9) |
| Transition Frequency | fT | 120 | MHz | VCE = -10V, IC = -100mA f = 50MHz (Note 9) |
| Switching Time | ton | 39 | ns | VCC = -10V, IC = -1A IB1 = -IB2 = -100mA (Note 9) |
| Switching Time | toff | 370 | ns | VCC = -10V, IC = -1A IB1 = -IB2 = -100mA (Note 9) |
Applications
- DC-DC Converters
- MOSFET & IGBT Gate Drivers
- Charging Circuits
- Power Switches
- Motor Control
2201121630_DIODES-ZX5T951GTC_C2934603.pdf
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