P Channel Enhancement Mode MOSFET CYSTECH MTP4411AQ8 with Pb Free Lead Plating and Low On Resistance
Key Attributes
Model Number:
MTP4411AQ8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
64pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
630pF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
MTP4411AQ8
Package:
SOP-8
Product Description
Product Overview
The CYStek MTP4411AQ8 is a P-Channel Enhancement Mode MOSFET designed for simple drive requirements, low on-resistance, and fast switching speeds. It features Pb-free lead plating and a halogen-free package, making it an environmentally friendly choice.
Product Attributes
- Brand: CYStek
- Package: SOP-8
- Environmental Grade: RoHS compliant and green compound products (G)
- Lead Plating: Pb-free
- Package Material: Halogen-free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250A |
| Gate-Source Voltage | VGS | 25 | V | - |
| Continuous Drain Current @ VGS=-10V, TA=25C | ID | -5.3 | A | TA=25C (Note 1) |
| Pulsed Drain Current | IDM | -24 | A | Note 2 |
| Total Power Dissipation | Pd | 2.5 | W | Note 1 |
| Operating Junction Temperature | Tj | -55~+150 | C | - |
| Storage Temperature | Tstg | -55~+150 | C | - |
| Thermal Resistance, Junction-to-case, max | RJC | 25 | C/W | - |
| Thermal Resistance, Junction-to-ambient, max | RJA | 50 | C/W | Note |
| Gate Threshold Voltage | VGS(th) | -1 ~ -2.5 | V | VDS=VGS, ID=-250A |
| Gate Leakage Current | IGSS | 100 | nA | VGS=25V, VDS=0V |
| Drain Leakage Current | IDSS | -1 | A | VDS=-30V, VGS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 30 (typ) / 40 (max) | m | ID=-5.3A, VGS=-10V |
| Drain-Source On-State Resistance | RDS(ON) | 43 (typ) / 60 (max) | m | ID=-4.2A, VGS=-4.5V |
| Forward Transconductance | GFS | 8 (typ) | S | VDS=-5V, ID=-5.3A |
| Input Capacitance | Ciss | 630 (typ) | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 76 (typ) | pF | |
| Reverse Transfer Capacitance | Crss | 64 (typ) | pF | |
| Turn-on Delay Time | td(ON) | 6 (typ) | ns | VDD=-15V, ID=-1A, VGS=-10V, RG=6 |
| Rise Time | tr | 17.4 (typ) | ns | |
| Turn-off Delay Time | td(OFF) | 63.6 (typ) | ns | |
| Fall Time | tf | 33.8 (typ) | ns | |
| Total Gate Charge | Qg | 14.2 (typ) | nC | VDS=-15V, VGS=-10V, ID=-5.3A |
| Gate-Source Charge | Qgs | 2.1 (typ) | nC | |
| Gate-Drain Charge | Qgd | 2.8 (typ) | nC | |
| Source-Drain Diode Voltage | VSD | -0.79 ~ -1.2 | V | VGS=0V, IS=-1.7A |
2410121913_CYSTECH-MTP4411AQ8_C373357.pdf
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