Medium Power Transistor 60V NPN Diodes FZT651TA with 3A Collector Current and Low Saturation Voltage
Key Attributes
Model Number:
FZT651TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
175MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FZT651TA
Package:
SOT-223
Product Description
FZT651 60V NPN Medium Power Transistor
The FZT651 is a 60V NPN medium power transistor designed for high continuous current applications. It offers a high continuous collector current of 3A and a peak pulse current of 6A, with a low saturation voltage of less than 300mV at 1A. This device is lead-free, RoHS compliant, and halogen and antimony-free, making it a "Green" device. It is suitable for various applications requiring reliable NPN transistor performance.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223 (Type DN)
- Package Material: Molded Plastic, "Green" Molding Compound
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- Automotive-Compliant Part Available: FZT651Q
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 80 | V | IC = 100µA |
| Collector-Emitter Breakdown Voltage | BVCEO | 60 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100µA |
| Collector Cut-Off Current | ICBO | 0.1 | µA | VCB = 60V |
| Collector Cut-Off Current | ICBO | 10 | µA | VCB = 60V, TA = +125°C |
| Emitter Cut-Off Current | IEBO | 20 | nA | VEB = 6V |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | V | IC = 1A, IB = 100mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC = 3A, IB = 300mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.25 | V | IC = 1A, IB = 100mA |
| Base-Emitter Turn-On Voltage | VBE(on) | 1.0 | V | IC = 1A, VCE = 2V |
| DC Current Gain | hFE | 200 | - | IC = 50mA, VCE = 2V |
| DC Current Gain | hFE | 300 | - | IC = 500mA, VCE = 2V |
| DC Current Gain | hFE | 170 | - | IC = 1A, VCE = 2V |
| DC Current Gain | hFE | 80 | - | IC = 2A, VCE = 2V |
| Current Gain-Bandwidth Product | fT | 175 | MHz | VCE = 5V, IC = 100mA, f = 100MHz |
| Switching Time (Turn-on) | ton | 45 | ns | IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA |
| Switching Time (Turn-off) | toff | 800 | - | IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA |
| Output Capacitance | Cobo | 30 | pF | VCB = 10V, f = 1MHz |
| Continuous Collector Current | IC | 3 | A | |
| Peak Pulse Current | ICM | 6 | A | |
| Power Dissipation | PD | 2 | W | (Note 5) |
| Power Dissipation | PD | 3 | W | (Note 6) |
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RθJA | 41.7 | °C/W | (Note 6) |
| Thermal Resistance, Junction to Leads | RθJL | 12.9 | °C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Electrostatic Discharge (Human Body Model) | ESD HBM | 4000 | V | JEDEC Class 3A |
| Electrostatic Discharge (Machine Model) | ESD MM | 400 | V |
2412251032_DIODES-FZT651TA_C24098.pdf
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