High Collector Current DIODES BC847BFA-7B 45V NPN Small Signal Transistor in Compact DFN0806 Package
Key Attributes
Model Number:
BC847BFA-7B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
435mW
Transition Frequency(fT):
170MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC847BFA-7B
Package:
DFN-3(0.8x0.6)
Product Description
Product Overview
The BC847BFA is a 45V NPN small signal transistor in a compact DFN0806 package. It offers a high collector current of 100mA and a power dissipation of 435mW. Its extremely small footprint (0.48mm) and low height (0.4mm) make it ideal for space-constrained applications. This device is AEC-Q101 qualified, lead-free, and RoHS compliant, making it suitable for high-reliability automotive and industrial applications.
Product Attributes
- Brand: Diodes Incorporated
- Complementary PNP Type: BC857BFA
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), Qualified to AEC-Q101 Standards
- Automotive Compliant Part Available: BC847BFAQ
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 50 | V | |
| Collector-Emitter Voltage | VCEO | 45 | V | |
| Emitter-Base Voltage | VEBO | 6.0 | V | |
| Continuous Collector Current | IC | 100 | mA | |
| Peak Pulse Collector Current | ICM | 200 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 435 | mW | @TA = +25C, Note 5 |
| Thermal Resistance, Junction to Ambient | RJA | 287 | C/W | @TA = +25C, Note 5 |
| Thermal Resistance, Junction to Lead | RJL | 150 | C/W | Note 6 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 200 | V | JEDEC Class B |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 50A, IB = 0 |
| Collector-Emitter Breakdown Voltage | BVCES | 50 | V | IC = 50A, IB = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 45 | V | IC = 1mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6.0 | V | IE = 50A, IC = 0 |
| Collector-Base Cut-Off Current | ICBO | 15 | nA | VCB = 40V |
| Collector-Emitter Cut-Off Current | ICES | 15 | nA | VCE = 40V |
| DC Current Gain | hFE | 200 - 470 | IC = 2.0mA, VCE = 5.0V | |
| DC Current Gain | hFE | 260 - 470 | IC = 10A, VCE = 5.0V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 122 | mV | IC = 10mA, IB = 0.5mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 300 | mV | IC = 100mA, IB = 5.0mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 880 | mV | IC = 10mA, IB = 0.5mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 1,100 | mV | IC = 100mA, IB = 5.0mA |
| Base-Emitter Voltage | VBE(on) | 725 | mV | IC = 10mA, VCE = 5V |
| Output Capacitance | Cobo | 1.5 | pF | VCB = 10.0V, f = 1.0MHz, IE = 0 |
| Current Gain-Bandwidth Product | fT | 170 | MHz | VCE = 5V, IC = 10mA, f = 100MHz |
2412251007_DIODES-BC847BFA-7B_C155299.pdf
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