Compact NPN Medium Power Transistor DIODES ZXTN2020FTA with 100V Collector Emitter Breakdown Voltage
Key Attributes
Model Number:
ZXTN2020FTA
Product Custom Attributes
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
1.2W
Transition Frequency(fT):
130MHz
Type:
NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTN2020FTA
Package:
SOT-23
Product Description
Product Overview
The ZXTN2020F is a 100V, SOT23 packaged NPN medium power transistor. It features advanced process capability and package design for maximized power handling and performance in a compact size, making it ideal for space-constrained applications. Key advantages include higher power dissipation in a SOT23 package, high peak current capability, low saturation voltage, and a 160V forward blocking voltage. It is suitable for applications such as MOSFET and IGBT gate driving, motor drives, and relay, lamp, and solenoid drives.
Product Attributes
- Brand: Zetex Semiconductors plc
- Product Code: ZXTN2020F
- Complementary Part Number: ZXTP2029F
- Package Type: SOT23
- Origin: United Kingdom (Corporate Headquarters)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Collector-base breakdown voltage | V(BR)CBO | 160 | 200 | V | IC=100A | |
| Collector-emitter breakdown voltage | V(BR)CEV | 160 | 200 | V | IC =1A, -1V< VBE<+0.3V | |
| Collector-emitter breakdown voltage | V(BR)CEO | 100 | 115 | V | IC=10mA (a) | |
| Emitter-base breakdown voltage | V(BR)EBO | 7 | 8 | V | IE=100A | |
| Collector-emitter cut-off current | ICEV | <1 | 20 | nA | VCES=128V, VBE = -1V | |
| Collector-base cut-off current | ICBO | <1 | 20 | nA | VCB=128V | |
| Emitter-base cut-off current | IEBO | <1 | 10 | nA | VEB=6V | |
| Static forward current transfer ratio | HFE | 100 | 100 | IC=10mA, VCE=2V(a) | ||
| 35 | 220 | IC=1A, VCE=2V(a) | ||||
| 13 | 60 | IC=4A, VCE=2V(a) | ||||
| 300 | IC=10A, VCE=2V(a) | |||||
| Collector-emitter saturation voltage | VCE(sat) | 20 | 40 | mV | IC=0.1A, IB=5mA(a) | |
| 30 | 50 | mV | IC=1A, IB=100mA(a) | |||
| 105 | 150 | mV | IC=2A, IB=100mA(a) | |||
| mV | IC=4A, IB=400mA(a) | |||||
| Base-emitter saturation voltage | VBE(sat) | 0.94 | 1.05 | V | IC=4A, IB=400mA(a) | |
| Base-emitter turn-on voltage | VBE(on) | 0.84 | 0.94 | V | IC=4A, VCE=2V(a) | |
| Transition frequency | fT | 130 | MHz | Ic=100mA, VCE=10V, f=50MHz | ||
| Output capacitance | Cobo | 22 | pF | VCB=10V, f=1MHz | ||
| Turnon time | t(on) | 37 | ns | VCC=10V, IC=1A, IB1=IB2=100mA | ||
| Turn-off time | t(off) | 910 | ns | VCC=10V, IC=1A, IB1=IB2=100mA | ||
| Power dissipation @ TA=25C | PD | 1.0 | 8 | W | (a) Linear derating factor 9.6 mW/C | |
| 1.2 | 9.6 | W | (b) Linear derating factor 12.5 mW/C | |||
| 1.56 | 12.5 | W | (c) Linear derating factor | |||
| Junction to ambient thermal resistance | RJA | 125 | C/W | (a) | ||
| Junction to ambient thermal resistance | RJA | 104 | C/W | (b) | ||
| Junction to ambient thermal resistance | RJA | 80 | C/W | (c) | ||
| Operating and storage temperature | Tj:Tstg | -55 | +150 | C |
1912111437_DIODES-ZXTN2020FTA_C460288.pdf
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