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quality DIODES DDTD113ZU7F NPN Transistor with Built In Biasing Resistors and IATF 16949 Certified Facility factory
quality DIODES DDTD113ZU7F NPN Transistor with Built In Biasing Resistors and IATF 16949 Certified Facility factory

DIODES DDTD113ZU7F NPN Transistor with Built In Biasing Resistors and IATF 16949 Certified Facility

Key Attributes
Model Number: DDTD113ZU-7-F
Product Custom Attributes
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DDTD113ZU-7-F
Package:
SOT-323
Product Description

Product Overview

The DDTD (XXXX) U is an NPN pre-biased transistor in a SOT323 surface mount package. It features epitaxial planar die construction and built-in biasing resistors, making it suitable for automated assembly. This device is totally lead-free, fully RoHS compliant, and halogen and antimony free, qualifying it as a "Green" device. It is also available for automotive applications requiring specific change control, with parts qualified to AEC-Q100/101/200 and manufactured in IATF 16949 certified facilities.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT323
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Automotive Applications: Available for applications requiring specific change control (AEC-Q100/101/200, PPAP capable, IATF 16949 certified facilities)

Technical Specifications

Part NumberR1(NOM)R2(NOM)VCC (Max)VIN (Max)IC (Max)PD (Max)RJA (C/W)
DDTD113EU1k10k50V+10V500mA200mW625C/W
DDTD123EU2.2k2.2k50V+12V500mA200mW625C/W
DDTD143EU4.7k4.7k50V+30V500mA200mW625C/W
DDTD114EU10k10k50V+40V500mA200mW625C/W
DDTD122JU0.22k4.7k50V+5V500mA200mW625C/W
DDTD113ZU1k10k50V+10V500mA200mW625C/W
DDTD123YU2.2k10k50V+12V500mA200mW625C/W
DDTD133HU3.3k10k50V+20V500mA200mW625C/W
DDTD123TU2.2kOpen50V5V (VEBO)500mA200mW625C/W
DDTD143TU4.7kOpen50V5V (VEBO)500mA200mW625C/W
DDTD114TU10kOpen50V5V (VEBO)500mA200mW625C/W
DDTD114GU010k50V5V (VEBO)500mA200mW625C/W

Electrical Characteristics Summary

CharacteristicSymbolMinTypMaxUnitTest Condition
Input Voltage (off)Vl(off)0.30.5VVCC = 5V, IO = 100A
Input Voltage (on)Vl(on)2.03.0VVO = 0.3V, IO = 10mA to 30mA (Varies by part)
Output Voltage (on)VO(on)0.3VIO/Il = 50mA/2.5mA
Input CurrentIl0.8828mAVI = 5V (Varies by part)
Output Current (off)IO(off)0.5AVCC = 50V, VI = 0V
DC Current GainGl / hFE33600VO = 5V, IO = 50mA / IC = 5mA, VCE = 5V (Varies by part)
Gain-Bandwidth ProductfT200MHzVCE = 10V, IE = 5mA, f = 100MHz
Collector-Base Breakdown VoltageBVCBO50VIC = 50A
Collector-Emitter Breakdown VoltageBVCEO40VIC = 1mA
Emitter-Base Breakdown VoltageBVEBO5VIE = 50A to 720A (Varies by part)
Collector Cutoff CurrentICBO0.5AVCB = 50V
Emitter Cutoff CurrentIEBO0.5580AVEB = 4V (Varies by part)
Collector-Emitter Saturation VoltageVCE(sat)0.3VIC = 50mA, IB = 2.5mA

2308101657_DIODES-DDTD113ZU-7-F_C5245909.pdf

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