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quality P Channel MOSFET DIODES DMP45H4D9HK3-13 450V Low On Resistance for Motor Control and DC DC Converters factory
quality P Channel MOSFET DIODES DMP45H4D9HK3-13 450V Low On Resistance for Motor Control and DC DC Converters factory

P Channel MOSFET DIODES DMP45H4D9HK3-13 450V Low On Resistance for Motor Control and DC DC Converters

Key Attributes
Model Number: DMP45H4D9HK3-13
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
4.7A
RDS(on):
3.1Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Number:
1 P-Channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
564pF
Pd - Power Dissipation:
104W
Gate Charge(Qg):
13.7nC@10V
Mfr. Part #:
DMP45H4D9HK3-13
Package:
TO-252
Product Description

Product Overview

The DMP45H4D9HK3 is a 450V P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance and maintain superior switching performance. It is ideal for high efficiency power management applications, including motor control, DC-DC converters, power management functions, and uninterrupted power supplies. Key features include low input capacitance, a high BVDSS rating, low input/output leakage, and a lead-free, halogen- and antimony-free (Green) construction.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: P-Channel Enhancement Mode MOSFET
  • Material: Molded Plastic, Green Molding Compound (UL Flammability Classification Rating 94V-0)
  • Finish: Lead-Free, RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Automotive Qualification: For automotive applications requiring specific change control (AEC-Q100/101/200, PPAP capable, IATF 16949 certified facilities), please contact Diodes or its representative.

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Product Summary
Drain-Source Voltage BVDSS -450 V TC = +25C
On-Resistance RDS(ON) Max 4.9 Ω VGS = -10V, ID = -1.05A
Continuous Drain Current ID -4.7 A TC = +25C, VGS = -10V
Maximum Ratings @TA = +25C, unless otherwise specified.
Drain-Source Voltage VDSS -450 V VGS = 0V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current (Note 5) ID -4.7 / -3.0 A VGS = -10V, TC = +25C / +100C
Maximum Body Diode Forward Current (Note 5) IS -1.5 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -12 A
Avalanche Current, L = 60mH (Note 7) IAS -2.5 A
Avalanche Energy, L = 60mH (Note 7) EAS 187 mJ
Thermal Characteristics @TA = +25C, unless otherwise specified.
Total Power Dissipation (Note 5) PD 104 / 41 W TC = +25C / +100C
Thermal Resistance, Junction to Ambient (Note 6) RθJA 41 °C/W
Thermal Resistance, Junction to Case (Note 5) RθJC 1.2 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = +25C, unless otherwise specified.
Drain-Source Breakdown Voltage BVDSS -450 V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS — / -1 µA VDS = -450V, VGS = 0V
Gate-Source Leakage IGSS — / ±100 nA VGS = ±30V, VDS = 0V
Gate Threshold Voltage VGS(TH) -3.0 / -4.0 / -5.0 V VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance RDS(ON) — / 3.1 / 4.9 Ω VGS = -10V, ID = -1.05A
Diode Forward Voltage VSD — / -1.4 V VGS = 0V, IS = -2.1A
Forward Transconductance gfs — / 1.4 / — S VDS = -50.0V, ID = -1.05A
Dynamic Characteristics (Note 7)
Input Capacitance Ciss — / 564 / — pF VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss — / 70 / — pF VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss — / 3.3 / — pF VDS = -25V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -10V) Qg — / 13.7 / — nC VDS = -360V, ID = -2.7A, VGS = -10V
Gate-Source Charge Qgs — / 3.4 / — nC VDS = -360V, ID = -2.7A, VGS = -10V
Gate-Drain Charge Qgd — / 6.0 / — nC VDS = -360V, ID = -2.7A, VGS = -10V
Turn-On Delay Time tD(ON) — / 21 / — ns VDD = -225V, RG = 3.0Ω, ID = -2.7A
Turn-On Rise Time tR — / 54 / — ns VDD = -225V, RG = 3.0Ω, ID = -2.7A
Turn-Off Delay Time tD(OFF) — / 34 / — ns VDD = -225V, RG = 3.0Ω, ID = -2.7A
Turn-Off Fall Time tF — / 34 / — ns VDD = -225V, RG = 3.0Ω, ID = -2.7A
Body Diode Reverse Recovery Time tRR — / 168 / — ns VGS = 0V, VDD = -200V, IS = -2.7A, dI/dt = 100A/µs
Body Diode Reverse Recovery Charge QRR — / 1.3 / — µC VGS = 0V, VDD = -200V, IS = -2.7A, dI/dt = 100A/µs
Mechanical Data
Package TO252 (DPAK)
Weight 0.33 grams (Approximate)
Ordering Information (Note 4)
Part Number DMP45H4D9HK3-13 TO252 (DPAK), 2,500 Tape & Reel

Notes:

  • 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
  • 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and Lead-free.
  • 3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  • 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
  • 5. Device mounted on infinite heatsink.
  • 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
  • 7. Guaranteed by design. Not subject to production testing.
  • 8. Short duration pulse test used to minimize self-heating effect.

2412251050_DIODES-DMP45H4D9HK3-13_C3281371.pdf

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