Complementary MOSFET H Bridge DIODES DMHT6016LFJ-13 optimized for motor control and power conversion

Key Attributes
Model Number: DMHT6016LFJ-13
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
27pF@30V
Number:
4 N-Channel
Input Capacitance(Ciss):
864pF@30V
Pd - Power Dissipation:
1.16W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
DMHT6016LFJ-13
Package:
VDFN5045-12
Product Description

Product Overview

The DMHT6016LFJ is a new generation complementary MOSFET H-Bridge designed for efficient motor control, DC-DC converters, and power management applications. It features low on-resistance, enabling low gate drive and high conversion efficiency. The thermally efficient package ensures cooler running applications, while its low input capacitance and fast switching speed contribute to overall performance. This device is also environmentally conscious, being totally lead-free, fully RoHS compliant, and halogen and antimony free (Green Device).

Product Attributes

  • Brand: Diodes Incorporated
  • Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Case Material: Molded Plastic, Green Molding Compound
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Product Number DMHT6016LFJ -- -- --
Drain-Source Voltage VDSS 60 V VGS = 0V, ID = 250A
Gate-Source Voltage VGSS 20 V --
Continuous Drain Current (TA = +25C) ID 10.6 A VGS = 10V, Steady State
Continuous Drain Current (TA = +70C) ID 8.5 A VGS = 10V, Steady State
Continuous Drain Current (TA = +25C) ID 30 m VGS = 4.5V, Steady State
Continuous Drain Current (TA = +70C) ID 8.7 A VGS = 4.5V, Steady State
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 60 A --
Maximum Continuous Body Diode Forward Current IS 2 A Note 6
Avalanche Current (L=0.1mH) IAS 15.3 A Note 7
Avalanche Energy (L=0.1mH) EAS 11.7 mJ Note 7
Total Power Dissipation (Note 5) PD 1.16 W Steady State
Thermal Resistance, Junction to Ambient (Note 5) RJA 108 C/W Steady State
Total Power Dissipation (Note 6) PD 2.7 W t<10s
Thermal Resistance, Junction to Ambient (Note 6) RJA 46 C/W Steady State
Thermal Resistance, Junction to Case (Note 6) RJC 4.4 C/W --
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C --
Gate Threshold Voltage VGS(TH) 1 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance (VGS = 10V) RDS(ON) 17 - 22 m ID = 10A
Static Drain-Source On-Resistance (VGS = 4.5V) RDS(ON) 22.2 - 30 m ID = 6A
Diode Forward Voltage VSD 0.7 - 1.2 V VGS = 0V, IS = 1A
Input Capacitance CISS 864 pF VDS = 30V, VGS = 0V, f = 1MHz
Output Capacitance COSS 282 pF VDS = 30V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance CRSS 27 pF VDS = 30V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) QG 8.4 nC VDS = 30V, ID = 10A
Total Gate Charge (VGS = 10V) QG 17 nC VDS = 30V, ID = 10A
Case Style -- V-DFN5045-12 (Type B) -- --
Weight -- 0.097 grams (Approximate) --
Ordering Information Part Number DMHT6016LFJ-13 -- V-DFN5045-12 (Type B), 3,000/Tape & Reel

1912111437_DIODES-DMHT6016LFJ-13_C460986.pdf

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