Complementary MOSFET H Bridge DIODES DMHT6016LFJ-13 optimized for motor control and power conversion
Product Overview
The DMHT6016LFJ is a new generation complementary MOSFET H-Bridge designed for efficient motor control, DC-DC converters, and power management applications. It features low on-resistance, enabling low gate drive and high conversion efficiency. The thermally efficient package ensures cooler running applications, while its low input capacitance and fast switching speed contribute to overall performance. This device is also environmentally conscious, being totally lead-free, fully RoHS compliant, and halogen and antimony free (Green Device).
Product Attributes
- Brand: Diodes Incorporated
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Case Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Number | DMHT6016LFJ | -- | -- | -- |
| Drain-Source Voltage | VDSS | 60 | V | VGS = 0V, ID = 250A |
| Gate-Source Voltage | VGSS | 20 | V | -- |
| Continuous Drain Current (TA = +25C) | ID | 10.6 | A | VGS = 10V, Steady State |
| Continuous Drain Current (TA = +70C) | ID | 8.5 | A | VGS = 10V, Steady State |
| Continuous Drain Current (TA = +25C) | ID | 30 | m | VGS = 4.5V, Steady State |
| Continuous Drain Current (TA = +70C) | ID | 8.7 | A | VGS = 4.5V, Steady State |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | 60 | A | -- |
| Maximum Continuous Body Diode Forward Current | IS | 2 | A | Note 6 |
| Avalanche Current (L=0.1mH) | IAS | 15.3 | A | Note 7 |
| Avalanche Energy (L=0.1mH) | EAS | 11.7 | mJ | Note 7 |
| Total Power Dissipation (Note 5) | PD | 1.16 | W | Steady State |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 108 | C/W | Steady State |
| Total Power Dissipation (Note 6) | PD | 2.7 | W | t<10s |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 46 | C/W | Steady State |
| Thermal Resistance, Junction to Case (Note 6) | RJC | 4.4 | C/W | -- |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | -- |
| Gate Threshold Voltage | VGS(TH) | 1 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance (VGS = 10V) | RDS(ON) | 17 - 22 | m | ID = 10A |
| Static Drain-Source On-Resistance (VGS = 4.5V) | RDS(ON) | 22.2 - 30 | m | ID = 6A |
| Diode Forward Voltage | VSD | 0.7 - 1.2 | V | VGS = 0V, IS = 1A |
| Input Capacitance | CISS | 864 | pF | VDS = 30V, VGS = 0V, f = 1MHz |
| Output Capacitance | COSS | 282 | pF | VDS = 30V, VGS = 0V, f = 1MHz |
| Reverse Transfer Capacitance | CRSS | 27 | pF | VDS = 30V, VGS = 0V, f = 1MHz |
| Total Gate Charge (VGS = 4.5V) | QG | 8.4 | nC | VDS = 30V, ID = 10A |
| Total Gate Charge (VGS = 10V) | QG | 17 | nC | VDS = 30V, ID = 10A |
| Case Style | -- | V-DFN5045-12 (Type B) | -- | -- |
| Weight | -- | 0.097 | grams (Approximate) | -- |
| Ordering Information | Part Number | DMHT6016LFJ-13 | -- | V-DFN5045-12 (Type B), 3,000/Tape & Reel |
1912111437_DIODES-DMHT6016LFJ-13_C460986.pdf
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