Glass Passivated Bridge Rectifier Diodes GBJ2010-F with High Dielectric Strength and UL Flammability
Product Overview
The GBJ20005 - GBJ2010 series are 20A glass passivated bridge rectifiers designed for printed circuit board applications. They feature high case dielectric strength, low reverse leakage current, and a surge overload rating to 240A peak. These rectifiers are UL listed and RoHS compliant.
Product Attributes
- Brand: Diodes Incorporated
- Material: Molded Plastic
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020C
- Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208
- Lead Free Plating: Tin Finish
- Polarity: Molded on Body
- Mounting: Through Hole for #6 Screw
- Mounting Torque: 5.0 in-lbs Maximum
- Marking: Type Number
- Weight: 6.6 grams (approximate)
- Certifications: UL Listed Under Recognized Component Index, File Number E94661
- RoHS Compliant: Yes (Note 4)
Technical Specifications
| Characteristic | Symbol | GBJ20005 | GBJ2001 | GBJ2002 | GBJ2004 | GBJ2006 | GBJ2008 | GBJ2010 | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Working Peak Reverse Voltage | VRWM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| DC Blocking Voltage | VR | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| RMS Reverse Voltage | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Average Forward Rectified Output Current @ TC = 110C | IO | 20 | A | ||||||
| Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load | IFSM | 240 | A | ||||||
| Forward Voltage per element @ IF = 10A | VFM | 1.05 | V | ||||||
| Peak Reverse Current @ TA = 25C at Rated DC Blocking Voltage | IR | 10 | A | ||||||
| Peak Reverse Current @ TC = 125C | IR | 500 | A | ||||||
| I2t Rating for Fusing (t < 8.3 ms) (Note 1) | I2t | 240 | A2s | ||||||
| Typical Total Capacitance per Element (Note 2) | CT | 60 | pF | ||||||
| Typical Thermal Resistance Junction to Case (Note 3) | R JC | 0.8 | C/W | ||||||
| Operating and Storage Temperature Range | Tj, TSTG | -55 to +150 | C | ||||||
2304140030_DIODES-GBJ2010-F_C151578.pdf
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