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quality Compact Bridge Rectifier Diodes DBF210-13 Suitable for Telecommunication Systems and Home Appliances factory
quality Compact Bridge Rectifier Diodes DBF210-13 Suitable for Telecommunication Systems and Home Appliances factory

Compact Bridge Rectifier Diodes DBF210-13 Suitable for Telecommunication Systems and Home Appliances

Key Attributes
Model Number: DBF210-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
70A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
930mV@2A
Current - Rectified:
2A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
DBF210-13
Package:
DBF
Product Description

Product Overview

The DBF210 is an advanced, new product bridge rectifier designed for AC to DC full wave rectification. It is suitable for various applications including SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, a miniature package for space saving, low leakage current, ideal suitability for SMT manufacturing, and a low forward voltage drop. It offers a surge overload rating of up to 70A peak and is Lead-Free, RoHS Compliant, Halogen and Antimony Free (Green Device).

Product Attributes

  • Brand: Diodes Incorporated
  • Origin: Not specified
  • Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Color: Not specified
  • Certifications: RoHS Compliant, Halogen and Antimony Free. "Green" Device

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking VoltageVRRM / VRWM / VR1000V
RMS Reverse VoltageVR(RMS)700V
Average Rectified Output CurrentIO2.0A@ TC = +110C (Note 5)
Non-Repetitive Peak Forward Surge Current (8.3ms Single Half Sine-Wave)IFSM70ASuperimposed on Rated Load
I2t Rating for Fusing (1ms < t < 8.3ms)I2t20.34AS
Reverse Breakdown VoltageV(BR)R1,000VIR = 5A (Note 7)
Forward Voltage (Per Element)VF0.85 / 0.93 / 0.95 / 1.0VIF = 1A, TA = +25C / IF = 2A, TA = +25C
Leakage Current (Per Element)IR0.03 / 11 / 500AVR = 1,000V, TA = +25C / VR = 1,000V, TA = +125C (Note 7)
Total Capacitance (Per Element)CT25pFVR = 4V, f = 1.0MHz
Thermal Resistance, Junction to Ambient (Per Element)RJA50C/WTypical (Note 6)
Thermal Resistance, Junction to Case (Per Element)RJC10C/WTypical
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C

1912111437_DIODES-DBF210-13_C460834.pdf

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