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quality RoHS Compliant NPN Transistor Doeshare MMBT3904M SOT723 Package General Purpose Electronic Component factory
quality RoHS Compliant NPN Transistor Doeshare MMBT3904M SOT723 Package General Purpose Electronic Component factory

RoHS Compliant NPN Transistor Doeshare MMBT3904M SOT723 Package General Purpose Electronic Component

Key Attributes
Model Number: MMBT3904M
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
100mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904M
Package:
SOT-723
Product Description

Product Overview

The MMBT3904M is an NPN General Purpose Transistor designed for a wide range of applications. It features a small outline surface mount package (SOT-723), making it suitable for space-constrained designs. This transistor is complementary to the MMBT3906M and is RoHS Compliant / Green EMC.

Product Attributes

  • Brand: DOESHARE
  • Type: NPN General Purpose Transistor
  • Package: SOT-723
  • Compliance: RoHS Compliant / Green EMC
  • Complementary to: MMBT3906M

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 0.2 A
Power Dissipation PC 0.1 W
Thermal Resistance from Junction to Ambient RJA 1250 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
ELECTRICAL CHARACTERISTICS @ 25C Unless Otherwise Specified
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 V
Collector cut-off current ICEX VCE=30V,VEB(off)=3V 50 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
DC current gain hFE VCE=1V,IC=1mA 70
VCE=1V,IC=10mA 100 300
VCE=1V,IC=50mA 60
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.2 V
IC=50mA,IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=10mA,IB=1mA 0.65 0.85 V
IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHz
Output capacitance Cob VCB=5V,IE=0,f=1MHz 4 pF
Input capacitance Cib VEB=0.5V,IC=0,f=1MHz 8 pF
Noise figure NF VCE=5V,IC=0.1mA,f=1MHz,RS=1k 5 dB
Switching Characteristics
Delay time td VCC=3V,VBE(off)=-0.5V, IC=10mA,IB1=1mA 35 ns
Rise time tr 25 ns
Storage time ts VCC=3V,IC=10mA IB1=IB2=1mA 200 ns
Fall time tf 50 ns
PACKAGE DIMENSIONS
Symbol Dimensions In Millimeters Min Max
A 1.100 1.300
B 0.8typ
C 1.100 1.300
D 0.700 0.900
E 0.200 0.300
F 0.400 0.500
G 0.150 0.250
H 0.060 0.160
L 0.150 0.250

2410121606_Doeshare-MMBT3904M_C2931700.pdf

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