Automotive Grade P Channel MOSFET Diodes DMP3056L 7 with Molded Plastic Case and Matte Tin Terminals
Key Attributes
Model Number:
DMP3056L-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@4.5V,5.0A
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
11.8nC@10V
Mfr. Part #:
DMP3056L-7
Package:
SOT-23
Product Description
Product Overview
The DMP3056L is a new generation P-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications. It offers low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is fully RoHS compliant and is a Halogen and Antimony free "Green" device. It is suitable for automotive applications requiring specific change control, and can be qualified to AEC-Q100/101/200 standards.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-Channel Enhancement Mode MOSFET
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Annealed over Copper Lead-Frame
- Compliance: Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. Halogen and Antimony free. Green Device.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| BVDSS | BVDSS | -30 | V | TA = +25C |
| RDS(ON) MAX | RDS(ON) MAX | 50m | VGS = -10V | |
| ID MAX | ID MAX | -4.3A | TA = +25C | |
| RDS(ON) MAX | RDS(ON) MAX | 70m | VGS = -4.5V | |
| ID MAX | ID MAX | -3.7A | TA = +25C | |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -30 | V | @ TA = +25C, unless otherwise specified. |
| Gate-Source Voltage | VGSS | 25 | V | @ TA = +25C, unless otherwise specified. |
| Drain Current (Note 5) | ID | -4.3 | A | VGS = -10V Steady State TA = +25C |
| Drain Current (Note 5) | ID | -3.4 | A | VGS = -10V Steady State TA = +70C |
| Pulsed Drain Current (Note 6) | IDM | -20 | A | @ TA = +25C, unless otherwise specified. |
| Total Power Dissipation (Note 5) | PD | 1.38 | W | @ TA = +25C, unless otherwise specified. |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 91 | C/W | @ TA = +25C, unless otherwise specified. |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | @ TA = +25C, unless otherwise specified. |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = -30V, VGS = 0V |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V |
| Gate-Source Leakage | IGSS | 800 | nA | VGS = 25V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | -1 to -2.1 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | m | VGS = -10V, ID = -6.0A |
| Static Drain-Source On-Resistance | RDS(ON) | 50 | m | VGS = -4.5V, ID = -5.0A |
| Static Drain-Source On-Resistance | RDS(ON) | 50 | m | VGS = -10V, ID = -6.0A |
| Static Drain-Source On-Resistance | RDS(ON) | 70 | m | VGS = -4.5V, ID = -5.0A |
| Diode Forward Voltage | VSD | -1.2 | V | VGS = 0V, IS = -1.7A |
| Input Capacitance | Ciss | 642 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 65 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 48 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | RG | 15 | VDS = 0V, VGS = 0V, f = 1.0MHz | |
| Total Gate Charge (VGS = -4.5V) | QG | 5.8 | nC | VDS = -15V, ID = -6A |
| Total Gate Charge (VGS = -10V) | QG | 11.8 | nC | VDS = -15V, ID = -6A |
| Gate-Source Charge | QGS | 2.0 | nC | VDS = -15V, ID = -6A |
| Gate-Drain Charge | QGD | 2.4 | nC | VDS = -15V, ID = -6A |
| Turn-On Delay Time | tD(ON) | 4.9 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Rise Time | tR | 4.7 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Turn-Off Delay Time | tD(OFF) | 35.2 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Fall Time | tF | 18.2 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Ordering Information | ||||
| Part Number | Case | Packaging | ||
| DMP3056L-7 | SOT23 (Standard) | 3000/Tape & Reel | ||
| DMP3056L-13 | SOT23 (Standard) | 10000/Tape & Reel | ||
| Mechanical Data | ||||
| Case | SOT23 | |||
| Weight (Approximate) | 0.009 | grams | ||
| Package Outline Dimensions (SOT23 Standard) | ||||
| Dimension | Min | Max | Typ | Unit |
| A | 0.90 | 1.15 | 1.025 | mm |
| A1 | 0.00 | 0.10 | 0.05 | mm |
| A2 | 0.85 | 1.10 | 0.975 | mm |
| b | 0.30 | 0.51 | 0.40 | mm |
| c | 0.080 | 0.202 | 0.11 | mm |
| D | 2.80 | 3.00 | 2.90 | mm |
| E | 2.25 | 2.55 | 2.40 | mm |
| E1 | 1.20 | 1.40 | 1.30 | mm |
| e | 0.89 | 1.03 | 0.915 | mm |
| e1 | 1.78 | 2.05 | 1.83 | mm |
| F | 0.40 | 0.60 | 0.535 | mm |
| L1 | 0.45 | 0.61 | 0.55 | mm |
| L | 0.25 | 0.55 | 0.40 | mm |
| a | 0 | 8 | -- | |
2412251003_DIODES-DMP3056L-7_C150724.pdf
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