Lead free fully rohs compliant green n channel mosfet DIODES DMG1012UW-7 with low input capacitance
Key Attributes
Model Number:
DMG1012UW-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@2.5V,500mA
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
5.37pF
Number:
1 N-channel
Output Capacitance(Coss):
9.68pF
Input Capacitance(Ciss):
60.67pF
Pd - Power Dissipation:
290mW
Gate Charge(Qg):
736.6pC@4.5V
Mfr. Part #:
DMG1012UW-7
Package:
SOT-323
Product Description
Product Overview
The DMG1012UW is an N-channel enhancement mode MOSFET designed for a wide range of applications. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds. This device also features low input/output leakage and is ESD protected up to 2kV. It is a totally lead-free, fully RoHS compliant, and halogen/antimony-free Green device. For automotive applications requiring specific change control, please contact Diodes Incorporated or your local representative.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- ESD Protection: Up to 2kV
- Case Material: Molded Plastic, Green Molding Compound (UL Flammability Classification Rating 94V-0)
- Terminal Finish: Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Maximum Ratings (@ TA = +25C, unless otherwise specified.) | ||||
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate-Source Voltage | VGSS | 6 | V | |
| Continuous Drain Current (Steady State) | ID | 1.0 (TA = +25C) 0.64 (TA = +85C) | A | |
| Pulsed Drain Current | IDM | 6 | A | (Note 6) |
| Power Dissipation | PD | 0.29 | W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 425 | C/W | @TA = +25C (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics (@ TA = +25C, unless otherwise specified.) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | - | 100 nA | VDS = 20V, VGS = 0V (TJ = +25C) |
| Gate-Source Leakage | IGSS | - | 1.0 A | VGS = 4.5V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 0.5 - 1.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(on) | - 0.3 0.45 | VGS = 4.5V, ID = 600mA | |
| 0.4 0.6 | VGS = 2.5V, ID = 500mA | |||
| 0.5 0.75 | VGS = 1.8V, ID = 350mA | |||
| Forward Transfer Admittance | |Yfs| | - 1.4 | S | VDS = 10V, ID = 400mA |
| Diode Forward Voltage | VSD | - 0.7 1.2 | V | VGS = 0V, IS = 150mA |
| Dynamic Characteristics (Note 8) | ||||
| Input Capacitance | Ciss | - 60.67 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | - 9.68 | pF | |
| Reverse Transfer Capacitance | Crss | - 5.37 | pF | |
| Total Gate Charge | Qg | - 736.6 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Gate-Source Charge | Qgs | - 93.6 | pC | |
| Gate-Drain Charge | Qgd | - 116.6 | pC | |
| Turn-On Delay Time | tD(on) | - 5.1 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA |
| Turn-On Rise Time | tR | - 7.4 | ns | |
| Turn-Off Delay Time | tD(off) | - 26.7 | ns | |
| Turn-Off Fall Time | tF | - 12.3 | ns | |
| Mechanical Data | ||||
| Case | SOT323 | |||
| Weight | 0.006 grams (Approximate) | grams | ||
| Ordering Information (Note 4) | ||||
| Part Number | Case | Packaging | ||
| DMG1012UW-7 | SOT323 | 3000 / Tape & Reel | ||
2412251008_DIODES-DMG1012UW-7_C156390.pdf
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