Power Management P Channel MOSFET DIODES DMG2305UX 13 Featuring Low On Resistance and Fast Switching
Key Attributes
Model Number:
DMG2305UX-13
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V;52mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
-
Output Capacitance(Coss):
85pF
Input Capacitance(Ciss):
808pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10.2nC@4.5V
Mfr. Part #:
DMG2305UX-13
Package:
SOT-23
Product Description
Product Overview
The DMG2305UX is a P-CHANNEL ENHANCEMENT MODE MOSFET designed to achieve minimal on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, including backlighting, power management functions, DC-DC converters, and motor controls. It features low on-resistance, low input capacitance, and fast switching speed. The device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, qualifying as a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-CHANNEL ENHANCEMENT MODE MOSFET
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Automotive Option: An Automotive-Compliant Part is Available Under Separate Datasheet (DMG2305UXQ)
- Case Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | BVDSS | -20 | V | Max TA = +25C |
| On-Resistance (Max) | RDS(on) | 52 | m | VGS = -4.5V, Max TA = +25C |
| On-Resistance (Max) | RDS(on) | 100 | m | VGS = -2.5V, Max TA = +25C |
| Continuous Drain Current (Max) | ID | -5.0 | A | VGS = -4.5V, TA = +25C (t<10s) |
| Continuous Drain Current (Max) | ID | -3.6 | A | VGS = -2.5V, TA = +25C (t<10s) |
| Package | SOT23 | Standard | ||
| Maximum Ratings | (@ TA = +25C, unless otherwise specified) | |||
| Drain-Source Voltage | VDSS | -20 | V | |
| Gate-Source Voltage | VGSS | 8 | V | |
| Continuous Drain Current | ID | -4.2 / -3.3 | A | VGS = -4.5V (Steady State TA = +25C / +70C) |
| Continuous Drain Current | ID | -5.0 / -4.0 | A | VGS = -4.5V (Steady State TA = +25C / +70C) |
| Pulsed Drain Current | IDM | -15 | A | (10s Pulse, Duty Cycle = 1%) |
| Power Dissipation | PD | 1.4 | W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 90 / 64 | C/W | (Steady State / t<10s, Note 5) |
| Thermal Resistance, Junction to Case | RJC | 33 | C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | (@ TA = +25C, unless otherwise specified) | |||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | -1.0 | A | VDS = -20V, VGS = 0V (TJ = +25C) |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 8V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -0.5 to -0.9 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(on) | 40 / 52 | m | VGS = -4.5V, ID = -4.2A |
| Static Drain-Source On-Resistance | RDS(on) | 52 / 100 | m | VGS = -2.5V, ID = -3.4A |
| Static Drain-Source On-Resistance | RDS(on) | 68 / 200 | m | VGS = -1.8V, ID = -2A |
| Forward Transfer Admittance | |YFS| | 9 | s | VDS = -5V, ID = -4A |
| Input Capacitance | Ciss | 808 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz (Guaranteed by design) |
| Output Capacitance | Coss | 85 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz (Guaranteed by design) |
| Reverse Transfer Capacitance | Crss | 77 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz (Guaranteed by design) |
| Gate Resistance | Rg | 15.2 | VGS = 0V, VDS = 0V, f = 1.0MHz (Guaranteed by design) | |
| Total Gate Charge | Qg | 10.2 | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A (Guaranteed by design) |
| Gate-Source Charge | Qgs | 1.3 | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A (Guaranteed by design) |
| Gate-Drain Charge | Qgd | 2.2 | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A (Guaranteed by design) |
| Turn-On Delay Time | tD(on) | 10.8 | ns | VDS = -4V, VGS = -4.5V, Rg = 6, ID = -1A (Guaranteed by design) |
| Turn-On Rise Time | tR | 13.7 | ns | VDS = -4V, VGS = -4.5V, Rg = 6, ID = -1A (Guaranteed by design) |
| Turn-Off Delay Time | tD(off) | 79.3 | ns | VDS = -4V, VGS = -4.5V, Rg = 6, ID = -1A (Guaranteed by design) |
| Turn-Off Fall Time | tF | 34.7 | ns | VDS = -4V, VGS = -4.5V, Rg = 6, ID = -1A (Guaranteed by design) |
| Mechanical Data | ||||
| Case | SOT23 | Standard | ||
| Weight | 0.009 | grams (Approximate) | ||
| Ordering Information | (Note 4) | |||
| Part Number | DMG2305UX-7 | Standard SOT23, 3,000/Tape & Reel | ||
| Part Number | DMG2305UX-13 | Standard SOT23, 10,000/Tape & Reel | ||
| Package Outline Dimensions | SOT23 (Standard) | |||
| Dim A | 0.90 - 1.15 | mm | ||
| Dim A1 | 0.00 - 0.10 | mm | ||
| Dim A2 | 0.85 - 1.10 | mm | ||
| Dim b | 0.30 - 0.51 | mm | ||
| Dim c | 0.080 - 0.202 | mm | ||
| Dim D | 2.80 - 3.00 | mm | ||
| Dim E | 2.25 - 2.55 | mm | ||
| Dim E1 | 1.20 - 1.40 | mm | ||
| Dim e | 0.89 - 1.03 | mm | ||
| Dim e1 | 1.78 - 2.05 | mm | ||
| Dim F | 0.40 - 0.60 | mm | ||
| Dim L1 | 0.45 - 0.61 | mm | ||
| Dim L | 0.25 - 0.55 | mm | ||
| Dim a | 0 - 8 |
2412251002_DIODES-DMG2305UX-13_C144153.pdf
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