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quality High reliability DIODES DMG6602SVT 7 MOSFET fully RoHS compliant and qualified to AEC Q101 standards factory
quality High reliability DIODES DMG6602SVT 7 MOSFET fully RoHS compliant and qualified to AEC Q101 standards factory

High reliability DIODES DMG6602SVT 7 MOSFET fully RoHS compliant and qualified to AEC Q101 standards

Key Attributes
Model Number: DMG6602SVT-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.4A;2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V;55mΩ@4.5V;73mΩ@10V;99mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF;45pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
40pF;50pF
Input Capacitance(Ciss):
290pF;350pF
Pd - Power Dissipation:
1.27W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
DMG6602SVT-7
Package:
TSOT-26
Product Description

Product Overview

The DMG6602SVT is a new generation complementary pair enhancement mode MOSFET designed for high-efficiency power management applications. It minimizes on-state resistance (RDS(on)) while maintaining superior switching performance. Ideal for backlighting, DC-DC converters, and power management functions, this device offers low input capacitance, fast switching speed, and low input/output leakage. It is totally lead-free, fully RoHS compliant, halogen and antimony free ("Green" Device), and qualified to AEC-Q101 standards for high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Compliance: Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
  • Environmental: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. "Green" Device.
  • Reliability: Qualified to AEC-Q101 Standards.
  • Case Material: Molded Plastic, "Green" Molding Compound.
  • Flammability Rating: UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208.

Technical Specifications

Characteristic Model Value Unit Test Condition
Drain-Source Voltage (V(BR)DSS) Q1 30 V TA = +25C
Q2 -30 V TA = +25C
RDS(on) Q1 @ VGS = 10V 60 m TA = +25C
Q1 @ VGS = 4.5V 100 m TA = +25C
Q2 @ VGS = -10V 95 m TA = +25C
Q2 @ VGS = -4.5V 140 m TA = +25C
ID (Continuous Drain Current) Q1 @ VGS = 10V 3.4 A TA = +25C
Q1 @ VGS = 4.5V 2.7 A TA = +25C
Q2 @ VGS = -10V -2.8 A TA = +25C
Q2 @ VGS = -4.5V -2.3 A TA = +25C
Case - TSOT26 - -
Weight - 0.013 grams (Approximate) -
Ordering Information DMG6602SVT-7 TSOT26, 3000 / Tape & Reel - -
Total Power Dissipation (PD) TA = +25C 0.84 W Note 5
Total Power Dissipation (PD) TA = +25C 1.27 W Note 6
Drain-Source Breakdown Voltage (BVDSS) Q1 30 V VGS = 0V, ID = 250A
Drain-Source Breakdown Voltage (BVDSS) Q2 -30 V VGS = 0V, ID = -250A
Gate Threshold Voltage (VGS(th)) Q1 1.0 - 2.3 V VDS = VGS, ID = 250A
Gate Threshold Voltage (VGS(th)) Q2 -1.0 - -2.3 V VDS = VGS, ID = -250A
Input Capacitance (Ciss) Q1 290 - 400 pF VDS = 15V, VGS = 0V, f = 1.2MHz
Input Capacitance (Ciss) Q2 350 - 420 pF VDS = -15V, VGS = 0V, f = 1.2MHz
Total Gate Charge (Qg) Q1 (VGS = 4.5V) 4 - 6 nC VDS = 15V, ID = 3.1A
Total Gate Charge (Qg) Q2 (VGS = -4.5V) 4 - 6 nC VDS = -15V, ID = -3A

2412251000_DIODES-DMG6602SVT-7_C110497.pdf

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