Diodes DMP4013LFGQ 13 Automotive MOSFET 40V P Channel with Low On State Losses and Thermally Package
Key Attributes
Model Number:
DMP4013LFGQ-13
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V,8.8A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
235pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.426nF@20V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
68.6nC@10V
Mfr. Part #:
DMP4013LFGQ-13
Package:
PowerDI3333-8
Product Description
Product Overview
The DMP4013LFGQ is a 40V P-Channel Enhancement Mode MOSFET designed to meet stringent automotive application requirements. It is AEC-Q101 qualified and PPAP capable, making it ideal for reverse-polarity protections, power-management functions, and DC-DC converters. This MOSFET offers low RDS(ON) for minimized on-state losses and features a small, thermally efficient PowerDI3333-8 package that occupies significantly less board space than traditional SO-8 packages, enabling higher density end products. The device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, classifying it as a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: PowerDI3333-8
- Package Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Automotive Qualification: AEC-Q101 Qualified, PPAP Capable, Manufactured in IATF 16949 certified facilities
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | -40 | V | VGS = 0V, ID = -250A |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current (TA = +25°C) | ID | -10.3 | A | VGS = -10V, Steady State |
| Continuous Drain Current (TA = +70°C) | ID | -8.3 | A | VGS = -10V, Steady State |
| Continuous Drain Current (TA = +25°C) | ID | -8.8 | A | VGS = -4.5V, Steady State |
| Continuous Drain Current (TA = +70°C) | ID | -7.0 | A | VGS = -4.5V, Steady State |
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) | IDM | -80 | A | |
| Maximum Continuous Body Diode Forward Current | IS | -10.3 | A | (Note 6) |
| Avalanche Current, L = 0.1mH | IAS | -34 | A | |
| Avalanche Energy, L = 0.1mH | EAS | 58 | mJ | |
| Total Power Dissipation (Note 5) | PD | 1 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 123 | °C/W | Steady State |
| Total Power Dissipation (Note 6) | PD | 2.1 | W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 60 | °C/W | Steady State |
| Thermal Resistance, Junction to Case (Note 6) | RθJC | 3.3 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Zero Gate Voltage Drain Current (TJ = +25°C) | IDSS | -1 | µA | VDS = -40V, VGS = 0V |
| Gate-Source Leakage | IGSS | ±100 | nA | VGS = ±20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | -1 to -3 | V | VDS = VGS, ID = -250µA |
| Static Drain-Source On-Resistance (VGS = -10V) | RDS(ON) | 9.4 to 13 | mΩ | ID = -10A |
| Static Drain-Source On-Resistance (VGS = -4.5V) | RDS(ON) | 12.3 to 18 | mΩ | ID = -8A |
| Diode Forward Voltage | VSD | -0.7 to -1.2 | V | VGS = 0V, IS = -1A |
| Input Capacitance | Ciss | 3426 | pF | VDS = -20V, VGS = 0V, f = 1MHz |
| Output Capacitance | Coss | 283 | pF | VDS = -20V, VGS = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | 235 | pF | VDS = -20V, VGS = 0V, f = 1MHz |
| Gate Resistance | Rg | 4.7 | Ω | VDS = 0V, VGS = 0V, f = 1MHz |
| Total Gate Charge (VGS = -4.5V) | Qg | 32.5 | nC | VDS = -20V, ID = -10A |
| Total Gate Charge (VGS = -10V) | Qg | 68.6 | nC | VDS = -20V, ID = -10A |
| Gate-Source Charge | Qgs | 8.2 | nC | VDS = -20V, ID = -10A |
| Gate-Drain Charge | Qgd | 9.9 | nC | VDS = -20V, ID = -10A |
| Turn-On Delay Time | tD(ON) | 5.3 | ns | VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A |
| Turn-On Rise Time | tR | 20 | ns | VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A |
| Turn-Off Delay Time | tD(OFF) | 126 | ns | VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A |
| Turn-Off Fall Time | tF | 83 | ns | VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A |
| Body Diode Reverse-Recovery Time | tRR | 19.5 | ns | IF = -10A, di/dt = 100A/µs |
| Body Diode Reverse-Recovery Charge | QRR | 9.8 | nC | IF = -10A, di/dt = 100A/µs |
| Weight | 0.034 | grams (Approximate) | ||
| Package Dimensions (L x W x H) | 3.30 x 3.30 x 0.80 | mm | (PowerDI3333-8) |
Ordering Information
| Part Number | Package | Packing Qty. | Carrier |
|---|---|---|---|
| DMP4013LFGQ-7 | PowerDI3333-8 | 2000 | Tape & Reel |
| DMP4013LFGQ-13 | PowerDI3333-8 | 3000 | Tape & Reel |
2412251148_DIODES-DMP4013LFGQ-13_C7264680.pdf
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