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quality DoesShare MMDT3906 Dual PNP Transistor in SOT363 Package Plastic Encapsulated Suitable for Switching factory
quality DoesShare MMDT3906 Dual PNP Transistor in SOT363 Package Plastic Encapsulated Suitable for Switching factory

DoesShare MMDT3906 Dual PNP Transistor in SOT363 Package Plastic Encapsulated Suitable for Switching

Key Attributes
Model Number: MMDT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200W
Transition Frequency(fT):
250MHz
Current - Collector(Ic):
200A
Number:
2 PNP
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3906
Package:
SOT-363
Product Description

Product Overview

The MMDT3906 is a dual transistor featuring two PNP transistors in a SOT-363 plastic-encapsulate package. It is complementary to the MMDT3904 and is ideal for low power amplification and switching applications. This product is designed for surface mounting.

Product Attributes

  • Brand: DOESHARE
  • Package Type: SOT-363
  • Encapsulation: Plastic
  • Transistor Type: Dual (PNP+PNP)
  • Complementary to: MMDT3904

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 -5 V
Emitter cut-off current IEBO VEB=-5V,IC=0 -50 nA
Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA
DC current gain hFE(1) VCE=-1V,IC=-0.1mA 60
DC current gain hFE(2) VCE=-1V,IC=-1mA 80
DC current gain hFE(3) VCE=-1V,IC=-10mA 100 300
DC current gain hFE(4) VCE=-1V,IC=-50mA 60
DC current gain hFE(5) VCE=-1V,IC=-100mA 30
Collector-emitter saturation voltage VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V
Collector-emitter saturation voltage VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V
Base-emitter saturation voltage VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V
Base-emitter saturation voltage VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V
Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 250 MHz
Delay time td VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA 35 nS
Rise time tr VCC=3V, IC=10mA IB1=-IB2=1mA 35 nS
Storage time ts VCC=3V, IC=10mA IB1=-IB2=1mA 225 nS
Fall time tf VCC=3V, IC=10mA IB1=-IB2=1mA 75 nS
General Description & Ratings
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -200 A
Collector Power Dissipation PC 200 W
Junction Temperature TJ 150
Storage Temperature Tstg -55 +150

Marking: K3N

Package Outline: SOT-363 Plastic surface mounted package


2411200150_Doeshare-MMDT3906_C2931758.pdf

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