Trench Power LV MOSFET Doeshare DN2300 N Channel Enhancement Mode Transistor with Pb Free Compliance
Key Attributes
Model Number:
DN2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
39mΩ@1.8V,2.5A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-channel
Output Capacitance(Coss):
165pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
900pF
Gate Charge(Qg):
9.2nC@4.5V
Mfr. Part #:
DN2300
Package:
SOT-23
Product Description
Product Overview
The DN2300 is an N-Channel Enhancement Mode Field Effect Transistor designed for high power and current handling capabilities. It features Trench Power LV MOSFET technology and is Pb-Free and RoHS Compliant. This device is suitable for PWM applications and load switching scenarios, offering a VDS of 20V and an ID of 6A with low on-resistance characteristics at various gate-source voltages.
Product Attributes
- Brand: DOESHARE
- Device Type: N-Channel Enhancement MOSFET
- Technology: Trench Power LV MOSFET
- Compliance: PbFree, RoHS Compliant
- Device Marking Code: DN2300, 2300 or AE9T
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-source Voltage | VDS | 20 | V | |
| Gate-source Voltage | VGS | ±10 | V | |
| Drain Current @ Steady State | ID | TA=25 | 6 | A |
| TA=70 | 5.4 | A | ||
| Pulsed Drain Current | IDM | 27 | A | |
| Total Power Dissipation | PD | @ TA=25 | 1.2 | W |
| Thermal Resistance Junction-to-Ambient @ Steady State | RθJA | 104 | °C/ W | |
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | °C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 20 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V,TC=25°C | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 0.45 - 1.0 (Typ: 0.62) | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=6.8A | 15 - 18 (Typ: 18) | mΩ |
| VGS= 2.5V, ID=3.0A | 19 - 22 (Typ: 22) | mΩ | ||
| VGS= 1.8V, ID=2.5A | 27 - 39 (Typ: 39) | mΩ | ||
| Diode Forward Voltage | VSD | IS=6A,VGS=0V | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 6 | A | |
| Dynamic Parameters | ||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 900 | pF |
| Output Capacitance | Coss | 165 | pF | |
| Reverse Transfer Capacitance | Crss | 75 | pF | |
| Switching Parameters | ||||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=6A | 9.2 | nC |
| Gate Source Charge | Qgs | 1.7 | nC | |
| Gate Drain Charge | Qg | 2.9 | nC | |
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω | 12 | ns |
| Turn-on Rise Time | tr | 52 | ns | |
| Turn-off Delay Time | tD(off) | 17 | ns | |
| Turn-off Fall Time | tf | 10 | ns | |
Note: A. Pulse Test: Pulse Width≤300us, Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Package Information: SOT-23
Suggested Pad Layout: Available in datasheet.
2410121434_Doeshare-DN2300_C2931746.pdf
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