Power Switching Device ElecSuper APM4953 P Channel MOSFET with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
APM4953
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@10V;55mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
2 P-Channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
520pF
Pd - Power Dissipation:
3.2W
Gate Charge(Qg):
9.2nC@10V
Mfr. Part #:
APM4953
Package:
SOP8
Product Description
Product Overview
The APM4953 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This device is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TA=25°C) | ID | -5.8 | A | |||
| Continuous Drain Current (TA=75°C) | ID | -4.5 | A | |||
| Maximum Power Dissipation (TA=25°C) | PD | 3.2 | W | |||
| Maximum Power Dissipation (TA=75°C) | PD | 1.9 | W | |||
| Pulsed Drain Current | IDM | -23.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance (t ≤ 10s) | RθJA | 32 | 40 | °C/W | ||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-5A | 40 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 55 | 80 | mΩ | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 520 | pF | ||
| Output Capacitance | COSS | 100 | pF | |||
| Reverse Transfer Capacitance | CRSS | 65 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-5A | 9.2 | 11 | nC | |
| Gate-to-Source Charge | QGS | 1.6 | nC | |||
| Gate-to-Drain Charge | QGD | 2.2 | nC | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=3Ω, RG=3Ω | 7.5 | ns | ||
| Rise Time | tr | 5.5 | ns | |||
| Turn-Off Delay Time | td(OFF) | 19 | ns | |||
| Fall Time | tf | 7 | ns | |||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.5 | V | |
2504101957_ElecSuper-APM4953_C5224316.pdf
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