RoHS Compliant NPN Transistor DoesShare MMBT3904W with SOT323 Package and Robust Electrical Features
Key Attributes
Model Number:
MMBT3904W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
200mA
Number:
1 NPN
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904W
Package:
SOT-323
Product Description
Product Overview
The MMBT3904W is a general-purpose NPN silicon transistor designed for various applications. It simplifies circuit design with its robust electrical characteristics and is RoHS compliant with a Green EMC designation. The transistor features a matte tin lead finish and is housed in a SOT-323 package, making it suitable for a wide range of electronic circuits.
Product Attributes
- Type: General Purpose Transistor (NPN)
- Package: SOT-323
- Lead Finish: Matte Tin (Sn)
- Certifications: RoHS Compliant, Green EMC
- Weight: approx. 0.001g
Technical Specifications
| Symbol | Parameter | Test Condition | Limits (Unit) | Min | Max |
|---|---|---|---|---|---|
| Off Characteristics | |||||
| V(BR)CEO | Collector-Emitter Breakdown Voltage (Note 1) | IC =1mA, IB =0A | Volts | 40 | - |
| V(BR)CBO | Collector-Base Breakdown Voltage | IC =10uA, IE =0A | Volts | 60 | - |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE =10uA, IB =0A | Volts | 6 | - |
| IBL | Base Cutoff Current | VCE =30V, VEB =3V | nA | - | 50 |
| ICEX | Collector Cutoff Current | VCE =30V, VEB =3V | nA | - | 50 |
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | |||||
| VCBO | Collector-Base Voltage | - | V | - | 60 |
| VCEO | Collector-Emitter Voltage | - | V | - | 40 |
| VEBO | Emitter-Base Voltage | - | V | - | 6 |
| IC | Collector Current | - | mA | - | 200 |
| PD | Power Dissipation (FR-4 Board minimum pad) | - | mW | - | 150 |
| RJA | Thermal Resistance from Junction to Ambient | - | C /W | - | 833 |
| TJ TSTG | Junction & Storage Temperature Range | - | C | -55 | +150 |
| On Characteristics | |||||
| HFE | DC Current Gain | IC =0.1mA, VCE =1V | - | 40 | 300 |
| IC =1.0mA, VCE =1V | - | 70 | - | ||
| IC =10mA, VCE =1V | - | 100 | - | ||
| IC =50mA, VCE =1V | - | 60 | - | ||
| IC =100mA, VCE =1V | - | 30 | - | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=10mA, IB=1mA | Volts | - | 0.2 |
| IC=50mA, IB=5mA | Volts | - | 0.3 | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC=10mA, IB=1mA | Volts | 0.65 | 0.85 |
| IC=50mA, IB=5mA | Volts | - | 0.95 | ||
| Small-signal Characteristics | |||||
| fT | Current-Gain-Bandwidth Product | IC =10mA, VCE =20V, f = 100MHz | MHz | 200 | - |
| Cobo | Output Capacitance | VCB =5V, IE =0A, f = 1.0MHz | pF | - | 4 |
| Cibo | Input Capacitance | VBE =0.5V, IC =0A, f = 1.0MHz | pF | - | 8 |
| hie | Input Impedance | VCE =10V, IC =1mA, f = 1.0kHz | 1 | 10 | |
| hre | Voltage Feedback Ratio | VCE =10V, IC =1mA, f = 1.0kHz | x10-4 | 0.5 | 8 |
| hfe | Small-signal Current Gain | VCE =10V, IC =1mA, f = 1.0kHz | - | 100 | 400 |
| hoe | Output Admittance | VCE =10V, IC =1mA, f = 1.0kHz | mhos | 1 | 40 |
| NF | Noise Figure | VCE =5V, IC =100uA Rs=1.0k f = 1.0kHz | dB | - | 5 |
| Switching Characteristics | |||||
| td tr | Delay Time Rise Time | VCC =3V, VBE =0.5V, IC =10mA, IB1 =1mA | nS | - | 35 |
| VCC =3V, IC =10mA, IB1 = IB2 =1mA | nS | - | 35 | ||
| ts tf | Storage Time Fall Time | VCC =3V, IC =10mA, IB1 = IB2 =1mA | nS | - | 200 |
| VCC =3V, IC =10mA, IB1 = IB2 =1mA | nS | - | 50 | ||
2410121523_Doeshare-MMBT3904W_C2931642.pdf
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