Low Input Capacitance N Channel Enhancement MOSFET Doeshare DN3018KW Suitable for Solid State Relays
Key Attributes
Model Number:
DN3018KW
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
300mA
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
12pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
18pF
Gate Charge(Qg):
2.4nC@10V
Mfr. Part #:
DN3018KW
Package:
SOT-323
Product Description
DN3018KW N-Channel Enhancement MOSFET
Product Overview
The DN3018KW is an N-Channel Enhancement Mode Field Effect Transistor designed with Trench Power MV MOSFET technology. It offers ESD protection up to 2.5KV (HBM), low input capacitance, and fast switching speeds, making it suitable as a voltage-controlled small signal switch. Its low input/output leakage and direct logic-level interface capabilities (TTL/CMOS) make it ideal for battery-operated systems and solid-state relays.
Product Attributes
- Brand: DOESHARE
- Device Marking Code: KN
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | 300 | mA | |||
| Pulsed Drain Current | IDM | 1.5 | A | |||
| Total Power Dissipation @ TA=25 | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | 357 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 9 | A | ||
| Gate-Body Leakage Current | IGSS2 | VGS= 10V, VDS=0V | 200 | nA | ||
| Gate-Body Leakage Current | IGSS3 | VGS= 5V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.8 | 1.1 | 1.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=300mA | 2.5 | 8.0 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=200mA | 3.0 | 13.0 | ||
| Diode Forward Voltage | VSD | IS=300mA,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 340 | mA | |||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 18 | pF | ||
| Output Capacitance | Coss | 12 | pF | |||
| Reverse Transfer Capacitance | Crss | 7 | pF | |||
| Total Gate Charge | Qg | VGS=10V,VDS=30V,ID=0.3A | 1.7 | 2.4 | nC | |
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=300mA, RGEN=6 | 5 | ns | ||
| Turn-off Delay Time | tD(off) | 17 | ns | |||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s | 30 | ns | ||
Note: B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2410121531_Doeshare-DN3018KW_C2931699.pdf
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