P channel MOSFET ElecSuper AOD413A ES by ElecSuper designed for fast switching and power applications
Key Attributes
Model Number:
AOD413A(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
12A
RDS(on):
34mΩ@10V;45mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
61pF
Pd - Power Dissipation:
11W
Input Capacitance(Ciss):
632pF
Output Capacitance(Coss):
74pF
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
AOD413A(ES)
Package:
TO-252
Product Description
Product Overview
The AOD413A(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.
Product Attributes
- Brand: ElecSuper
- Model: AOD413A(ES)
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | -12 | A | ||
| Continuous Drain Current | ID | TC=100°C | -7.2 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 11 | W | ||
| Pulsed Drain Current | IDM | -48 | A | |||
| Avalanche current single pulse | IAS | RG=25Ω, VDD=-20V, VGS=-10V, L=0.5mH, TJ=25°C | -10 | A | ||
| Avalanche energy single pulse | EAS | RG=25Ω, VDD=-20V, VGS=-10V, L=0.5mH, TJ=25°C | 25 | mJ | ||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Case Resistance (t ≤ 10s) | RθJC | 11.4 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3A | 34 | 44 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-2A | 45 | 58.5 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-20V, f=1MHz | 632 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V, f=1MHz | 74 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V, f=1MHz | 61 | pF | ||
| Total Gate Charge | QG | VGS=0 to -10V, VDS=-20V, ID =-2A | 15 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to -10V, VDS=-20V, ID =-2A | 3 | |||
| Gate-to-Drain Charge | QGD | VGS=0 to -10V, VDS=-20V, ID =-2A | 3.3 | |||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-20V, ID=-2A, RG=2.5Ω | 7 | ns | ||
| Rise Time | tr | VGS=-10V, VDD=-20V, ID=-2A, RG=2.5Ω | 13 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDD=-20V, ID=-2A, RG=2.5Ω | 21 | ns | ||
| Fall Time | tf | VGS=-10V, VDD=-20V, ID=-2A, RG=2.5Ω | 7 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-3A | -1.2 | V | ||
2506121200_ElecSuper-AOD413A-ES_C49108748.pdf
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